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Communication Dans Un Congrès Année : 2023

A 42.24 Gb/s channel bonding up-converter with integrated multi-LO generation in 45nm CMOS

Résumé

This paper presents an energy-efficient wideband V-band channel-bonding up-converter. The circuit, fabricated in 45nm CMOS RFSOI technology is composed of four lanes and an output hybrid combiner based on differential coupled lines. The circuit has four I and Q inputs and each one gets up-converter to a different channel at V-band at the output. The four required LO frequencies (58.32, 60.48, 62.64 and 64.48 GH) are generated on-chip using high integer number frequency multiplication from a common reference input at 2.16 GHz that sets the channel spacing. Four-channel 64-QAM modulation is demonstrated with a total data rate of 42.24 Gb/s and 9.9 pJ/b of energy efficiency.

Domaines

Electronique
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Dates et versions

cea-04228432 , version 1 (04-10-2023)

Identifiants

Citer

Alexandre Siligaris, Pierre Courouve, Guillaume Waltener, Abdelaziz Hamani, Cedric Dehos, et al.. A 42.24 Gb/s channel bonding up-converter with integrated multi-LO generation in 45nm CMOS. 2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Jan 2023, Las Vegas, United States. ⟨10.1109/SiRF56960.2023.10046233⟩. ⟨cea-04228432⟩
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