Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability
Résumé
In this paper, we investigate the impact of ReRAM resistance fluctuations based on experiments on 16kb arrays and 3D KMC-based simulations. After individual cell relaxation (~s range) and ReRAM array's resistance distribution stabilization, fluctuations at the single cell level still occur, especially in HRS, and are due to VO migration and recombination, RTN, and 1/f noise. For the first time, the dynamic evolution of these current fluctuations is described. In a 1st phase (1-10min @ RT), higher current variations are measured due to RTN and VO migration. In the 2nd phase (>10min), contribution from VO migration decreases as VO are either neutralized or too far to affect cell resistance. Finally, the impact of single cell fluctuations on memory array variability and reliability is analyzed.
Domaines
Electronique
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