Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling
Résumé
The current temperature dependence of a 3.9 μm GaN-on-Silicon epitaxy at temperatures ranging from 25 °C to 200 °C and for voltages beneath the plateau limited by the carrier generation in the p-doped substrate is analyzed. Based upon a fit with analytical transport models, the vertical current is reported for the first time to be the superposition of three different transport mechanisms: Recombination limited at low and middle voltages for low temperatures, Ohmic at low and middle voltages for high temperatures and Nearest Neighbor Hopping (NNH) at high voltages. Thanks to their temper-ature dependences and therefore to their energy, the transports can be related to either point defects clustered around threading dislocations or to interstitial nitrogen.
Domaines
Electronique
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SSDM2022_Vertical transport understanding_Florian Rigaud-Minet.pdf (619.43 Ko)
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