Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface in Gate-First MOSc-HEMT Process Flow - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Conference Papers Year : 2022

Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface in Gate-First MOSc-HEMT Process Flow

Abstract

In this work, we investigate the impact of Post-Deposition Anneal (PDA) of Atomic-Layer Deposited (ALD) Al2O3 on etched GaN for MOS-channel High Electron Mobility Transistors (MOSc-HEMTs) Gate-First process flow using C-V measurements carried out on MOS capacitors (MOSCAPs). For PDA up to 500°C, a reduction of the flat-band voltage hysteresis (ΔVFB) is reported and explained by the reduction of Ga-O bonds and O-H groups observed by Hard X-Ray Photoelectron Spectroscopy (HAXPES) analysis, the latter being confirmed by Fourier Transform Infrared Spectroscopy (FTIR). For a 600°C PDA, Grazing Incidence XRD (GIXRD) analysis shows a small crystallized κ-Al2O3 signal on etched GaN, which is absent for asgrown GaN. This beginning of crystallization could explain the degradation in ΔVFB and breakdown field for PDA above 500°C observed on MOSCAPs after the Gate-First process flow overall thermal budget.
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Dates and versions

cea-03846232 , version 1 (10-11-2022)

Identifiers

  • HAL Id : cea-03846232 , version 1

Cite

Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Blend Mohamad, William Vandendaele, Eugénie Martinez, et al.. Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface in Gate-First MOSc-HEMT Process Flow. GaN MARATHON, Jun 2022, Venise, Italy. ⟨cea-03846232⟩
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