Hydrogen implantation-induced blistering in diamond : towards diamond layer transfer by the Smart CutTM technique
Résumé
The effect of H$^+$ implantation and annealing of diamond (100) monocrystalline substrates has been studied by ToFSIMS,
cathodoluminescence, transmission spectroscopy and TEM. Blistering conditions suitable for the Smart Cut$^{TM}$
technology have been identified in monocrystalline diamond, using two sets of hydrogen implantation and annealing.
A first hydrogen implantation followed by a first annealing leads to amorphization of a buried layer without hydrogen
exodiffusion. Blisters and exfoliations appear at the surface of the diamond samples after a second hydrogen implantation
inside the pre-amorphized diamond layer and a final annealing, as evidenced by TEM and optical microscopy.
Demonstration of hydrogen-induced blistering is a major step to adapt the Smart Cut$^{TM}$ process on diamond material.
This process is compatible with wafer bonding before the second annealing and therefore open the way for thin diamond
layer transfer, still not achieved to date.
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Masante et al. - 2022 - Hydrogen implantation-induced blistering in diamon.pdf (2.94 Mo)
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