High-energy photoelectron spectroscopy of Si3N4 thin film on Si with Cr Kα excitation
Abstract
Si3N4 thin film grown by low-pressure chemical vapor deposition was measured by high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. A survey scan and high-resolution spectra of Si 1s, Si 2s, Si 2p, and N 1s are reported.
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