High-energy photoelectron spectroscopy of Si3N4 thin film on Si with Cr Kα excitation - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles Surface Science Spectra Year : 2022

High-energy photoelectron spectroscopy of Si3N4 thin film on Si with Cr Kα excitation

Abstract

Si3N4 thin film grown by low-pressure chemical vapor deposition was measured by high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. A survey scan and high-resolution spectra of Si 1s, Si 2s, Si 2p, and N 1s are reported.

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Dates and versions

cea-03564235 , version 1 (10-02-2022)

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Pierre-Marie Deleuze, Kateryna Artyushkova, Eugénie Martinez, Olivier Renault. High-energy photoelectron spectroscopy of Si3N4 thin film on Si with Cr Kα excitation. Surface Science Spectra, 2022, 29 (1), pp.014007. ⟨10.1116/6.0001513⟩. ⟨cea-03564235⟩
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