Multilevel programming reliability in Si-doped GeSbTe for Storage Class Memory
Résumé
Phase-Change Memory (PCM) demonstrated to be a promising Non-Volatile Memory technology to address Storage Class Memory (SCM) applications that can be distinguished in memory-type and storage-type. In this work we show how αGeSbTe (αGST) alloy can address both SCM types, in particular using Si doping. Thanks to electrical characterization of 4 kb PCM arrays, supported by TEM analyses, we demonstrate how Si doping in αGST can lead to a huge improvement of MLC operations using a doublepulse protocol. This result, combined with an improved data retention, proves Si-doped αGST suitability for storage-type SCM, whereas high endurance and high speed in undoped αGST allows to target memory-type SCM.
Domaines
Sciences de l'ingénieur [physics]| Origine | Fichiers produits par l'(les) auteur(s) |
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