MoS2 Transistors with Electrografted Organic Ultrathin Film as Efficient Gate Dielectric - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Conference Papers Year : 2016
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cea-02351410 , version 1 (06-11-2019)

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  • HAL Id : cea-02351410 , version 1

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Hugo Casademont, Laure Fillaud, Xavier Lefèvre, Renaud Cornut, Bruno Jousselme, et al.. MoS2 Transistors with Electrografted Organic Ultrathin Film as Efficient Gate Dielectric. E-MRS 2016 Spring Meeting, May 2016, Lille, France. ⟨cea-02351410⟩
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