Doping profile extraction in thin SOI films: application to A2RAM - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Conference Papers Year :

Doping profile extraction in thin SOI films: application to A2RAM

Abstract

We propose for the first time a method based on C-V measurement to extract the bridge doping profile which governs the A2RAM performances. Assessed with TCAD simulation and simple extraction model adapted from bulk devices, this technique is validated with experimental data.
Fichier principal
Vignette du fichier
eurosoi-ulis_Francois_Tcheme_Wakam_2018.pdf (1.38 Mo) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

cea-02270895 , version 1 (26-08-2019)

Identifiers

  • HAL Id : cea-02270895 , version 1

Cite

F Tcheme Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, et al.. Doping profile extraction in thin SOI films: application to A2RAM. EuroSOI-ULIS 2018, Mar 2018, Granada, Spain. ⟨cea-02270895⟩
28 View
145 Download

Share

Gmail Facebook Twitter LinkedIn More