A simple interpolation model for the carrier mobility in Trigate and gate-all-around silicon NWFETs
Résumé
We compute the electron and hole mobilities in Trigate and gate-all-around silicon nanowires (SiNWs)
within the nonequilibrium Green’s Function framework. We then derive a simple model for the dependence of
the mobility on the SiNW width and height. This model interpolates between the square SiNW and thin film limits.
In order to provide a complete description of the mobility in SiNW devices, we calculate the phonon, surface roughness,
and remote Coulomb-limited mobilities of square nanowires and of thin films with side or thickness t = 5, 7, and 10 nm.
The mobility of arbitrary rectangular SiNWs with width W = t or height H = t can then be reconstructed from these partial
mobilities using Matthiessen’s rule. We show that these models successfully reproduce the trends measured on
n- and p-type devices with different widths and orientations.
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