Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles IEEE Transactions on Electron Devices Year : 2015

Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

Abstract

The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current-voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.

Dates and versions

cea-01745394 , version 1 (28-03-2018)

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Cite

Viktoryia Uhnevionak, Alexander Burenkov, Christian Strenger, Guillermo Ortiz, Eléna Bedel-Pereira, et al.. Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs. IEEE Transactions on Electron Devices, 2015, 62 (8), pp.2562-2570. ⟨10.1109/ted.2015.2447216⟩. ⟨cea-01745394⟩
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