Large-Scale Assembly of Single Nanowires through Capillary-Assisted Dielectrophoresis
Maéva Collet
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Sven Salomon
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Naiara Yohanna Klein
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Florent Seichepine
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Christophe Vieu
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et al.
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istex
hal-01942320v1
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Enhanced nonlinear optical properties from individual silicon nanowires
Peter Wiecha
,
Arnaud Arbouet
,
Christian Girard
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Thierry Baron
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Aurélie Lecestre
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et al.
Nanotechnology Materials and Devices Conference (NMDC), 2016 IEEE , Oct 2016, Toulouse, France. pp.121416 - 121416,
⟨10.1109/NMDC.2016.7777139⟩
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hal-01763387v1
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Gravure de nanofils GaAs sur substrat Si(100) pour l'intégration de nano-transistors 3D
Aurélie Lecestre
,
Pascal Dubreuil
,
Nicolas Mallet
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Franck Carcenac
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Romain Cipro
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et al.
15èmes Journées Nano, Micro et Optoélectronique (JNMO 2016) , May 2016, Les Issambres, France
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hal-01330934v1
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Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate
Aurélie Lecestre
,
Mickael Martin
,
Fuccio Cristiano
,
Thierry Baron
,
Guilhem Larrieu
Journal articles
hal-03600996v1
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Advances in top-down fabrication and processing of vertical SiGe nanowire arrays for future nanoelectronics applications
Jonas Müller
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Aurélie Lecestre
,
Rémi Demoulin
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Fuccio Cristiano
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J. M. Hartmann
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et al.
J2N 2022 - Journées Nationales Nanofils semiconducteurs , Sep 2022, Nice, France
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hal-03771519v1
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Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers
L. Dagault
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S. Kerdilès
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P Acosta-Alba
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J.-M. Hartmann
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J.-P. Barnes
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et al.
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hal-02983939v1
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Study of recrystallization and activation processes in thin and highly doped Silicon-On-Insulator layers by nanosecond Laser Thermal Annealing
N Chery
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M Zhang
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Richard Monflier
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N. Mallet
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G Seine
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et al.
Journal of Applied Physics , 2022, 131 (6), pp.065301
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hal-03454821v2
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High performance CMOS FDSOI devices activated at low temperature
L. Pasini
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P. Batude
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J. Lacord
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M. Cassé
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B. Mathieu
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et al.
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hal-01730659v1
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Extended defects in ion-implanted si during nanosecond laser annealing
Fuccio Cristiano
,
Y. Qiu
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Eléna Bedel-Pereira
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Karim Huet
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Fulvio Mazzamuto
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et al.
Conference papers
hal-01721156v1
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Strongly Directional Scattering from Dielectric Nanowires
Peter Wiecha
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Aurelien Cuche
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Arnaud Arbouet
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Christian Girard
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Gérard Colas Des Francs
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et al.
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hal-01730478v1
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Tailoring wavelength and emitter-orientation dependent propagation of single photons in silicon nanowires
Mélodie Humbert
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Peter Wiecha
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Gérard Colas Des Francs
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Xiao Yu
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Nicolas Mallet
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et al.
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hal-03611963v1
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Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study
Antoine Jay
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Anne Hémeryck
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Fuccio Cristiano
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Denis Rideau
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Pierre-Louis Julliard
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et al.
Conference papers
hal-03366621v1
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Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics
Jean-Marie Poumirol
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Clément Majorel
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Nicolas Chery
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Christian Girard
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Peter Wiecha
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et al.
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hal-03040170v1
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Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon
Yang Qiu
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Fuccio Cristiano
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Karim Huet
,
Fulvio Mazzamuto
,
Giuseppe Fisicaro
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et al.
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hal-01659180v1
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Extended defects and precipitation in heavily B-doped silicon
O. Cojocaru-Mirédin
,
Fuccio Cristiano
,
Pier-Francesco Fazzini
,
Dominique Mangelinck
,
D. Blavette
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hal-01921833v1
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Split-Channel Ballistic Transport in an InSb Nanowire
Juan Carlos Estrada Saldana
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Yann-Michel Niquet
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Jean-Pierre Cleuziou
,
Eduardo Lee
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Diana Car
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et al.
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hal-01921932v1
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Hyperdoped Si nanocrystals embedded in silica for infrared plasmonics
Meiling Zhang
,
Jean-Marie Poumirol
,
Nicolas Chery
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Hervé Rinnert
,
Alaa Giba
,
et al.
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hal-04088288v1
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Control of light emission of quantum emitters coupled to silicon nanoantenna using cylindrical vector beams
Martin Montagnac
,
Yoann Brûlé
,
Aurélien Cuche
,
Jean-Marie Poumirol
,
Sébastien J Weber
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et al.
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hal-04212490v1
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Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors
Ana Estrada-Real
,
Ioannis Paradisanos
,
Peter Wiecha
,
Jean-Marie Poumirol
,
Aurelien Cuche
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et al.
Journal articles
hal-03845142v1
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Fano-Resonances in High Index Dielectric Nanowires for Directional Scattering
Peter Wiecha
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Aurelien Cuche
,
Houssem Kallel
,
Gérard Colas Des Francs
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Aurélie Lecestre
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et al.
Herausgeber: Kamenetskii, Eugene, Sadreev, Almas, Miroshnichenko, Andrey (Eds.).
Fano Resonances in Optics and Microwaves: Physics and Applications ,
Springer , pp.283-310, 2018, 978-3-319-99730-8
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hal-01850259v1
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Stress relaxation and dopant activation in nsec laser annealed SiGe
Fuccio Cristiano
,
Richard Monflier
,
Richard Daubriac
,
Rémi Demoulin
,
Emmanuel Scheid
,
et al.
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hal-03449341v1
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A Differential Hall Effect method with sub-nanometre resolution for active dopant concentration profiling in ultra-thin Si 1-x Ge x and Si doped layers
Richard Daubriac
,
Emmanuel Scheid
,
S. Joblot
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R. Beneyton
,
P Acosta Alba
,
et al.
2018
Preprints, Working Papers, ...
hal-01730674v1
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Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect
Richard Daubriac
,
Emmanuel Scheid
,
S. Joblot
,
R. Beneyton
,
P Acosta Alba
,
et al.
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon , Mar 2018, Grenade, Spain
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hal-01735436v1
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Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime
Meiling Zhang
,
Jean-Marie Poumirol
,
Nicolas Chery
,
Clement Majorel
,
Rémi DEMOULIN
,
et al.
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hal-03737737v1
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Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers
Léa Dagault
,
P. Acosta-Alba
,
S. Kerdiles
,
J. P. Barnes
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J. M. Hartmann
,
et al.
Journal articles
cea-02186445v1
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Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures
A-S. Royet
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S. Kerdiles
,
P. Acosta Alba
,
Caroline Bonafos
,
Vincent Paillard
,
et al.
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) , Sep 2019, Udine, Italy. pp.1-4,
⟨10.1109/SISPAD.2019.8870529⟩
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hal-02392503v1
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Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium
Pier-Francesco Fazzini
,
Fuccio Cristiano
,
Etienne Talbot
,
Gérard Benassayag
,
S. Paul
,
et al.
Journal articles
hal-01633467v1
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Direct imaging of boron segregation to extended defects in silicon
S. Duguay
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T. Philippe
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Fuccio Cristiano
,
D. Blavette
Journal articles
hal-01922903v1
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Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate
S. Duguay
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M. Ngamo
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P. F Fazzini
,
Fuccio Cristiano
,
K. Daoud
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et al.
Journal articles
istex
hal-01922657v1
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Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-Amorphised silicon
Fuccio Cristiano
,
Zahi Essa
,
Yang Qiul
,
Yohann Spiegel
,
Frank Torregrosa
,
et al.
Conference papers
hal-01928869v1
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