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Structure: Internal structure identifier : 390153

Large-Scale Assembly of Single Nanowires through Capillary-Assisted Dielectrophoresis

Maéva Collet , Sven Salomon , Naiara Yohanna Klein , Florent Seichepine , Christophe Vieu , et al.
Advanced Materials, 2015, 27 (7), pp.1268-1273. ⟨10.1002/adma.201403039⟩
Journal articles istex hal-01942320v1

Enhanced nonlinear optical properties from individual silicon nanowires

Peter Wiecha , Arnaud Arbouet , Christian Girard , Thierry Baron , Aurélie Lecestre , et al.
Nanotechnology Materials and Devices Conference (NMDC), 2016 IEEE, Oct 2016, Toulouse, France. pp.121416 - 121416, ⟨10.1109/NMDC.2016.7777139⟩
Conference papers hal-01763387v1

Gravure de nanofils GaAs sur substrat Si(100) pour l'intégration de nano-transistors 3D

Aurélie Lecestre , Pascal Dubreuil , Nicolas Mallet , Franck Carcenac , Romain Cipro , et al.
15èmes Journées Nano, Micro et Optoélectronique (JNMO 2016), May 2016, Les Issambres, France
Conference papers hal-01330934v1
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Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate

Aurélie Lecestre , Mickael Martin , Fuccio Cristiano , Thierry Baron , Guilhem Larrieu
ACS Omega, 2022, 7, pp.5836 - 5843. ⟨10.1021/acsomega.1c05876⟩
Journal articles hal-03600996v1

Advances in top-down fabrication and processing of vertical SiGe nanowire arrays for future nanoelectronics applications

Jonas Müller , Aurélie Lecestre , Rémi Demoulin , Fuccio Cristiano , J. M. Hartmann , et al.
J2N 2022 - Journées Nationales Nanofils semiconducteurs, Sep 2022, Nice, France
Conference papers hal-03771519v1
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Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers

L. Dagault , S. Kerdilès , P Acosta-Alba , J.-M. Hartmann , J.-P. Barnes , et al.
Applied Surface Science, 2020, 527, pp.146752. ⟨10.1016/j.apsusc.2020.146752⟩
Journal articles hal-02983939v1
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Study of recrystallization and activation processes in thin and highly doped Silicon-On-Insulator layers by nanosecond Laser Thermal Annealing

N Chery , M Zhang , Richard Monflier , N. Mallet , G Seine , et al.
Journal of Applied Physics, 2022, 131 (6), pp.065301
Journal articles hal-03454821v2

High performance CMOS FDSOI devices activated at low temperature

L. Pasini , P. Batude , J. Lacord , M. Cassé , B. Mathieu , et al.
2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩
Conference papers hal-01730659v1

Extended defects in ion-implanted si during nanosecond laser annealing

Fuccio Cristiano , Y. Qiu , Eléna Bedel-Pereira , Karim Huet , Fulvio Mazzamuto , et al.
Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
Conference papers hal-01721156v1
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Strongly Directional Scattering from Dielectric Nanowires

Peter Wiecha , Aurelien Cuche , Arnaud Arbouet , Christian Girard , Gérard Colas Des Francs , et al.
ACS photonics, 2017, 4 (8), pp.2036 - 2046. ⟨10.1021/acsphotonics.7b00423⟩
Journal articles hal-01730478v1
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Tailoring wavelength and emitter-orientation dependent propagation of single photons in silicon nanowires

Mélodie Humbert , Peter Wiecha , Gérard Colas Des Francs , Xiao Yu , Nicolas Mallet , et al.
Physical Review Applied, 2022, 17 (1), pp.014008. ⟨10.1103/PhysRevApplied.17.014008⟩
Journal articles hal-03611963v1
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Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

Antoine Jay , Anne Hémeryck , Fuccio Cristiano , Denis Rideau , Pierre-Louis Julliard , et al.
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.128-132, ⟨10.1109/SISPAD54002.2021.9592553⟩
Conference papers hal-03366621v1

Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics

Jean-Marie Poumirol , Clément Majorel , Nicolas Chery , Christian Girard , Peter Wiecha , et al.
ACS photonics, 2021, 8 (5), pp.1393-1399. ⟨10.1021/acsphotonics.1c00019⟩
Journal articles hal-03040170v1
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Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Yang Qiu , Fuccio Cristiano , Karim Huet , Fulvio Mazzamuto , Giuseppe Fisicaro , et al.
Nano Letters, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩
Journal articles hal-01659180v1

Extended defects and precipitation in heavily B-doped silicon

O. Cojocaru-Mirédin , Fuccio Cristiano , Pier-Francesco Fazzini , Dominique Mangelinck , D. Blavette
Thin Solid Films, 2013, 534, pp.62 - 66. ⟨10.1016/j.tsf.2013.01.090⟩
Journal articles hal-01921833v1

Split-Channel Ballistic Transport in an InSb Nanowire

Juan Carlos Estrada Saldana , Yann-Michel Niquet , Jean-Pierre Cleuziou , Eduardo Lee , Diana Car , et al.
Nano Letters, 2018, 18 (4), pp.2282 - 2287. ⟨10.1021/acs.nanolett.7b03854⟩
Journal articles hal-01921932v1

Hyperdoped Si nanocrystals embedded in silica for infrared plasmonics

Meiling Zhang , Jean-Marie Poumirol , Nicolas Chery , Hervé Rinnert , Alaa Giba , et al.
Nanoscale, 2023, 15 (16), pp.7438-7449. ⟨10.1039/D3NR00035D⟩
Journal articles hal-04088288v1
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Control of light emission of quantum emitters coupled to silicon nanoantenna using cylindrical vector beams

Martin Montagnac , Yoann Brûlé , Aurélien Cuche , Jean-Marie Poumirol , Sébastien J Weber , et al.
Light: Science and Applications, 2023, 12 (1), pp.239. ⟨10.1038/s41377-023-01229-9⟩
Journal articles hal-04212490v1

Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors

Ana Estrada-Real , Ioannis Paradisanos , Peter Wiecha , Jean-Marie Poumirol , Aurelien Cuche , et al.
Communications Physics, 2023, 6 (1), pp.102. ⟨10.1038/s42005-023-01211-2⟩
Journal articles hal-03845142v1

Fano-Resonances in High Index Dielectric Nanowires for Directional Scattering

Peter Wiecha , Aurelien Cuche , Houssem Kallel , Gérard Colas Des Francs , Aurélie Lecestre , et al.
Herausgeber: Kamenetskii, Eugene, Sadreev, Almas, Miroshnichenko, Andrey (Eds.). Fano Resonances in Optics and Microwaves: Physics and Applications, Springer, pp.283-310, 2018, 978-3-319-99730-8
Book sections hal-01850259v1

Stress relaxation and dopant activation in nsec laser annealed SiGe

Fuccio Cristiano , Richard Monflier , Richard Daubriac , Rémi Demoulin , Emmanuel Scheid , et al.
IWJT - International Workshop on Junction Technology, Jun 2021, Kyoto (on line), Japan. ⟨10.23919/IWJT52818.2021.9609361⟩
Conference papers hal-03449341v1
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A Differential Hall Effect method with sub-nanometre resolution for active dopant concentration profiling in ultra-thin Si 1-x Ge x and Si doped layers

Richard Daubriac , Emmanuel Scheid , S. Joblot , R. Beneyton , P Acosta Alba , et al.
2018
Preprints, Working Papers, ... hal-01730674v1
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Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect

Richard Daubriac , Emmanuel Scheid , S. Joblot , R. Beneyton , P Acosta Alba , et al.
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain
Conference papers hal-01735436v1
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Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime

Meiling Zhang , Jean-Marie Poumirol , Nicolas Chery , Clement Majorel , Rémi DEMOULIN , et al.
Nanophotonics, 2022, 2022, pp.0283. ⟨10.1515/nanoph-2022-0283⟩
Journal articles hal-03737737v1

Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers

Léa Dagault , P. Acosta-Alba , S. Kerdiles , J. P. Barnes , J. M. Hartmann , et al.
ECS Journal of Solid State Science and Technology, 2019, 8 (3), pp.202-208. ⟨10.1149/2.0191903jss⟩
Journal articles cea-02186445v1

Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures

A-S. Royet , S. Kerdiles , P. Acosta Alba , Caroline Bonafos , Vincent Paillard , et al.
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870529⟩
Conference papers hal-02392503v1
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Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium

Pier-Francesco Fazzini , Fuccio Cristiano , Etienne Talbot , Gérard Benassayag , S. Paul , et al.
Thin Solid Films, 2010, 518 (9), pp.2338 - 2341. ⟨10.1016/j.tsf.2009.09.172⟩
Journal articles hal-01633467v1
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Direct imaging of boron segregation to extended defects in silicon

S. Duguay , T. Philippe , Fuccio Cristiano , D. Blavette
Applied Physics Letters, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩
Journal articles hal-01922903v1

Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate

S. Duguay , M. Ngamo , P. F Fazzini , Fuccio Cristiano , K. Daoud , et al.
Thin Solid Films, 2010, 518 (9), pp.2398 - 2401. ⟨10.1016/j.tsf.2009.09.159⟩
Journal articles istex hal-01922657v1

Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-Amorphised silicon

Fuccio Cristiano , Zahi Essa , Yang Qiul , Yohann Spiegel , Frank Torregrosa , et al.
12th International Workshop on Junction Technology (IWJT 2012), May 2012, Shanghai, China. pp.1--7, ⟨10.1109/IWJT.2012.6212827⟩
Conference papers hal-01928869v1