Energy level alignment of a hole-transport organic layer and ITO: Towards applications for organic electronic devices - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles ACS Applied Materials & Interfaces Year : 2017

Energy level alignment of a hole-transport organic layer and ITO: Towards applications for organic electronic devices

Mathieu G Silly
Fausto Sirotti
Etienne Derat

Abstract

2,2’,6,6’-tetraphenyl-4,4’-dipyranylidene (DIPO-Ph4) was grown by vacuum-deposition on an indium tin oxide (ITO) substrate. The films were characterized by atomic force microscopy and synchrotron radiation UV and X-ray photoelectron spectroscopy to gain an insight into the material growth and to better understand the electronic properties of the DIPO-Ph4/ITO interface. Results show formation of cationic DIPO-Ph4 at ITO interface with a charge transfer from the organic layer to the anode material. This has been confronted to DFT calculations. We present as a conclusion the energetic diagram of the DIPO-Ph4/ITO system and some perspectives with a typical photovoltaic active layer: P3HT:PCBM.
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cea-01575439 , version 1 (20-08-2017)

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Quentin Arnoux, Anthony Boucly, Vincent Barth, Rabah Benbalagh, Albano Cossaro, et al.. Energy level alignment of a hole-transport organic layer and ITO: Towards applications for organic electronic devices. ACS Applied Materials & Interfaces, 2017, 9 (36), pp.30992-31004. ⟨10.1021/acsami.7b06691⟩. ⟨cea-01575439⟩
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