High resolution scanning near field mapping of enhancement on SERS substrates: comparison with photoemission electron microscopy - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Accéder directement au contenu
Article Dans Une Revue Physical Chemistry Chemical Physics Année : 2016

High resolution scanning near field mapping of enhancement on SERS substrates: comparison with photoemission electron microscopy

Résumé

The need for a dedicated spectroscopic technique with nanoscale resolution to characterize SERS substrates pushed us to develop a proof of concept of a functionalized tip–surface enhanced Raman scattering (FTERS) technique. We have been able to map hot spots on semi-continuous gold films; in order to validate our approach we compare our results with photoemission electron microscopy (PEEM) data, the complementary electron microscopy tool to map hot spots on random metallic surfaces. Enhanced Raman intensity maps at high spatial resolution reveal the localisation of hotspots at gaps for many neighboring nanostructures. Finally, we compare our findings with theoretical simulations of the enhancement factor distribution, which confirms a dimer effect as the dominant origin of hot spots.
Fichier non déposé

Dates et versions

cea-01483780 , version 1 (06-03-2017)

Identifiants

Citer

C. Awada, J. Plathier, C. Dab, Fabrice Charra, Ludovic Douillard, et al.. High resolution scanning near field mapping of enhancement on SERS substrates: comparison with photoemission electron microscopy. Physical Chemistry Chemical Physics, 2016, 18 (14), pp.9405 - 9411. ⟨10.1039/C5CP08015K⟩. ⟨cea-01483780⟩
46 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More