In memory energy application for resistive random access memory - Laboratoire d'Electronique et des Technologies de l'Information Accéder directement au contenu
Article Dans Une Revue Advanced Electronic Materials Année : 2021

In memory energy application for resistive random access memory

Résumé

This work explores the innovative concept of a hybrid dual‐behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage. RRAM (resistive random access memory) is considered a major candidate as next‐generation memory, thanks to its promising performances in terms of scalability and CMOS process compatibility. Its working mechanisms, based on faradaic processes, motivate the study on the feasibility of operating RRAM also as energy storage element. To evaluate the energy capability, various electrochemical characterizations on state‐of‐the‐art RRAM are presented. The highly resistive electrolyte, extremely small physical scale (nm), and current range (pA), put in quite a critical framework, far from conventional solid‐state batteries. Cyclic voltammetry tests reveal that although no oxidation peak appears during the redox cycle, the cells behave as standard electrochemical storage elements when investigating the impact of the scan rate, maximum positive voltage, and area on the reduction peak. Concentration and diffusion coefficients are derived, in the order of 10 −12 cm 2 s −1 and few mmol cm −3 , respectively, while energy storage capability amounts to 3.5 pJ µm −2 . Finally, design concepts are proposed, where RRAM “in‐memory energy” technology would be a newfangled approach to meet the needs of various emerging and standard applications.
Fichier principal
Vignette du fichier
2021 - Trotti - In Memory Energy Application for Resistive Random Access Memory.pdf (4.15 Mo) Télécharger le fichier
Origine Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

cea-04523527 , version 1 (17-05-2024)

Identifiants

Citer

Paola Trotti, Sami Oukassi, Gabriel Molas, Mathieu Bernard, François Aussenac, et al.. In memory energy application for resistive random access memory. Advanced Electronic Materials, 2021, 7 (12), pp.2100297. ⟨10.1002/aelm.202100297⟩. ⟨cea-04523527⟩
5 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Mastodon Facebook X LinkedIn More