Study of the leakage current mechanisms in quasi-vertical GaN-on-silicon Schottky diode fabricated by localized epitaxy
Résumé
in this work, temperature-dependent currentvoltage characteristics was measured to investigate
leakage conduction mechanisms in GaN-on-Si quasivertical Schottky barrier diode grown with localized epitaxy.
At low reverse bias (-0V to -10V), thermionic emission and Frenkel-Poole are dominated, at a relatively high voltage range (-10V to -40V), the increased electric filed promotes the electron hopping along the threading dislocation in the bulk GaN layers, and VRH becomes the main current mechanism at whole temperature range.
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