Article Dans Une Revue Journal of Applied Physics Année : 1999

Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor

C. Hernandez
Y. Campidelli
  • Fonction : Auteur
D. Simon
  • Fonction : Auteur
D. Bensahel
  • Fonction : Auteur
I. Sagnes
  • Fonction : Auteur
G. Patriarche
  • Fonction : Auteur

Résumé

We report on the structural and optical properties of Ge/Si self-assembled quantum dots epitaxially grown on Si(001). The Ge islands are grown in an industrial 200 mm single-wafer chemical vapor deposition reactor. The surface density of the Ge islands is as much as 2×10$^{10}$ cm$^{−2}$. The islands exhibit a maximum photoluminescence at 1.55 μm wavelength. The photoluminescence energy is correlated to the three-dimensional quantum confinement energy and to the size and geometry of the clusters, as observed by cross-section transmission electron microscopy.

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Dates et versions

cea-05025556 , version 1 (08-04-2025)

Identifiants

Citer

C. Hernandez, Y. Campidelli, D. Simon, D. Bensahel, I. Sagnes, et al.. Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor. Journal of Applied Physics, 1999, 86 (2), pp.1145-1148. ⟨10.1063/1.370856⟩. ⟨cea-05025556⟩
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