Communication Dans Un Congrès Année : 2022

Using universal target design in conjunction with accuracy and multiwavelength knobs for non-critical layer ov measurements on YS-S375

Résumé

Continued tightening of overlay control budget in semiconductor lithography drives the need for improved metrology capabilities. Aggressive improvements are needed for overlay metrology, accuracy and precision to address below 5nm on product overlay spec. However at the same time cost reduction driving factor leads to need of target reduction size as well as quick time to design target without performance loss on the YieldStar (YS) metrology tools. This paper will present metrology results of a scatterometry based platform showing metrology results with focus not only on precision and accuracy but also validate a target in a faster cycle time, in particular designs that could be used straight away on non-critical layers. Designed targets are validated with HMQ (Holistic Metrology Qualification) on product measurements techniques to deliver an optimized accurate recipe to the production line. The main takeaway from this paper is to use universal designs together with accuracy package-options using multiwavelength approach on YS-S375 to deliver best target performance.
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Dates et versions

cea-04654503 , version 1 (19-07-2024)

Identifiants

  • HAL Id : cea-04654503 , version 1

Citer

Yoann Blancquaert, Michael May, Jerome Depre, Maxime Cannac, Blandine Minghetti, et al.. Using universal target design in conjunction with accuracy and multiwavelength knobs for non-critical layer ov measurements on YS-S375. SPIE Advance Lithography + Patterning 2022, Feb 2022, San José, United States. ⟨cea-04654503⟩
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