Optical Properties of GeSe 1 −x Te x Chalcogenide Materials Promising for on‐Chip Low and Ultra‐Low Loss Reconfigurable Photonics and Nonlinear Devices - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Accéder directement au contenu
Article Dans Une Revue physica status solidi (RRL) - Rapid Research Letters Année : 2024

Optical Properties of GeSe 1 −x Te x Chalcogenide Materials Promising for on‐Chip Low and Ultra‐Low Loss Reconfigurable Photonics and Nonlinear Devices

Anthony Albanese
Martina Tomelleri
  • Fonction : Auteur
Lara Karam
  • Fonction : Auteur
Jean‐baptiste Dory
Christophe Licitra
Benoît Charbonnier
Aurélien Coillet
Benoît Cluzel
Pierre Noé

Résumé

The highly promising linear and nonlinear optical properties of innovative thin films of GeSe 1– x Te x chalcogenide materials in the amorphous as‐deposited state, and after crystallization, are revealed here. These innovative alloys bridge the gap between two families of materials: chalcogenide glasses (GeSe) and phase‐change materials (GeTe). Their unique optical properties make them attractive candidates for reconfigurable and nonlinear photonic applications in the infrared. In this context, it is shown how, by varying the Te content of GeSe 1– x Te x thin films, it is possible to tailor their linear and nonlinear optical properties to optimize them for a wide range of innovative applications.
Fichier non déposé

Dates et versions

cea-04610763 , version 1 (13-06-2024)

Identifiants

Citer

Anthony Albanese, Martina Tomelleri, Lara Karam, Jean‐baptiste Dory, Christophe Licitra, et al.. Optical Properties of GeSe 1 −x Te x Chalcogenide Materials Promising for on‐Chip Low and Ultra‐Low Loss Reconfigurable Photonics and Nonlinear Devices. physica status solidi (RRL) - Rapid Research Letters, 2024, ⟨10.1002/pssr.202400129⟩. ⟨cea-04610763⟩
23 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Mastodon Facebook X LinkedIn More