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Communication Dans Un Congrès Année : 2023

Large Scale Integration of 2D material for RF switches

Résumé

2D materials are promising candidates for next generation devices. Especially, switching behavior [1] has been demonstrated with TMD like MoS$_2$, which allows the manufacturing of memristors [2] or high cut-off frequency RF switches [3]. Nevertheless, the high growth temperature of 2D material by physical or chemical methods prevents their direct integration in circuits. An intermediate transfer step from the growth substrate to the final substrate is necessary to achieve their large-scale integration. Today, most publications are based on individual devices with a great lack of reproducibility and statistics. Here, we report the successful large-scale integration of MoS2 in memristors reaching the current state of the art. In this work, planar bottom electrodes are patterned on a 200 mm wafer by standard process from microelectronics. About 250 dies of 1 cm² were thus obtained. A large-scale process flow is developed by transferring and patterning MoS2 and top electrodes on the dies, vertical memories and RF switches are performed with the following structure: bottom electrode/2D material/top electrode. Morphological characterizations by SEM, AFM, Raman spectroscopy show the good quality of the fabrication process. Memories and radio-frequency devices are characterized exhibiting a reproducible resistance-switching behavior. Several cycles (7) are observed on several devices. The I$_{ON}$/I$_{OFF}$ ratio is around 10$^4$. RF performances are also highlighted a typical behavior of RF switches devices with OFF-state and ON-state.
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Dates et versions

cea-04524636 , version 1 (28-03-2024)

Identifiants

  • HAL Id : cea-04524636 , version 1

Citer

Clotilde Ligaud, Pierre Trousset, Lucie Le Van-Jodin, Bruno Reig, Clémence Hellion, et al.. Large Scale Integration of 2D material for RF switches. C'Nano 2023: The Nanoscience Meeting, CNRS, Mar 2023, Poitiers, France. ⟨cea-04524636⟩
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