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Article Dans Une Revue Thin Solid Films Année : 1998

Reconstruction of the Si-terminated β-SiC(100) surface

Résumé

We have determined the atomic structure of the c(4x2) reconstructed Si-terminated $\beta$-SiC(100) surface by comparing experimental height profiles with theoretical ones calculated with the scanning tunneling microscopy (STM)–elastic scattering quantum chemistry (ESQC) method. A large number of possible atomic configurations are considered. We found that the better fit between experiments and theory is obtained if half of the Si dimers have their altitude lowered by 0.1 $\mathring{A}$. Consequently, we conclude that the c(4x2) reconstruction is caused by alternative up and down dimers within the dimer rows, the lower dimers being not visible in the STM images.
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Dates et versions

cea-04464999 , version 1 (19-02-2024)

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Laurent Pizzagalli, C Joachim, A Mayne, G Dujardin, F Semond, et al.. Reconstruction of the Si-terminated β-SiC(100) surface. Thin Solid Films, 1998, Thin solid films, 318 (1-2), pp.136-139. ⟨10.1016/S0040-6090(97)01177-2⟩. ⟨cea-04464999⟩
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