Pragmatic OxRAM compact model ready to use for design studies - CEA - Commissariat à l’énergie atomique et aux énergies alternatives
Article Dans Une Revue Solid-State Electronics Année : 2023

Pragmatic OxRAM compact model ready to use for design studies

Résumé

We propose a pragmatic OxRAM device compact model describing SET, RESET, read operations and accounting for variability. The model is implemented in Verilog-A and usable with standard SPICE simulator. The objective is not to provide physical insights into OxRAM device operation but to develop a robust model, simple to calibrate and accounting for the main effect for design studies. It includes the dependency of Low Resistive State (LRS) resistance with compliance current, and of High Resistive State (HRS) resistance with the programming voltage: the proposed model is able to describe multi-level OxRAM. Switching time variation with programming voltages for SET and RESET operations is also included. It is validated on HFO2 OxRAM device through the measurements of isolated 1T-1R structure and 16kb matrix.
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Dates et versions

cea-04249918 , version 1 (19-10-2023)

Identifiants

Citer

Joris Lacord, Carlo Cagli, Jury Sandrini. Pragmatic OxRAM compact model ready to use for design studies. Solid-State Electronics, 2023, https://doi.org/10.1016/j.sse.2023.108652. ⟨10.1016/j.sse.2023.108652⟩. ⟨cea-04249918⟩
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