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Article Dans Une Revue Materials Science Forum Année : 2023

Evaluation of crystal quality and dopant activation of Smart Cut™- transferred 4H-SiC thin film

Résumé

The Smart Cut™ process offers an advantageous opportunity to provide a large number of performance-improved SiC substrates for power electronics. The crystalline quality and the electrical activation of the 4H-SiC transferred layer are then at stake when it comes to the power device reliability. In this study, we find that the H+ ion implantation used for the Smart Cut™ process leads to electrical deactivation of dopants and partially disorders the material. The transferred layer fully recovers its initial crystalline quality after a 1300°C anneal, with no further evolution beyond this temperature. At this point however, the n-type dopants are still inactive. The dopant reactivation occurs in the same temperature range than that of implanted nitrogen: between 1400°C and 1700°C. After 1700°C, the initial doping level of bulk SiC is recovered.
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Origine : Publication financée par une institution
Licence : CC BY - Paternité

Dates et versions

cea-04176716 , version 1 (30-08-2023)

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Guillaume Gelineau, Julie Widiez, Emmanuel Rolland, Kremena Vladimirova, Alexandre Moulin, et al.. Evaluation of crystal quality and dopant activation of Smart Cut™- transferred 4H-SiC thin film. Materials Science Forum, 2023, 1089, pp.71-79. ⟨10.4028/p-026sj4⟩. ⟨cea-04176716⟩
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