Impact of Bottom Electrode Integration on the variability of 4kb RRAM Matrices - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Conference Papers Year : 2020

Impact of Bottom Electrode Integration on the variability of 4kb RRAM Matrices

Sandrini J.
  • Function : Author
Persico A.
  • Function : Author
Nodin J.F.
  • Function : Author
Magis T.
  • Function : Author
Crochemore R.
  • Function : Author
Castellani N.
  • Function : Author
Cyrille M.C.
  • Function : Author
Molas G.
  • Function : Author
Nowak E.
  • Function : Author
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Dates and versions

cea-03022902 , version 1 (25-11-2020)

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  • HAL Id : cea-03022902 , version 1

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Tran N.P., Sandrini J., Persico A., Nodin J.F., Magis T., et al.. Impact of Bottom Electrode Integration on the variability of 4kb RRAM Matrices. 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Aug 2020, Hsinchu, Taiwan. ⟨cea-03022902⟩

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