Fabrication and characterization of Er-doped Silicon-Rich Oxide toroidal microcavities on chip - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Conference Papers Year : 2009

Fabrication and characterization of Er-doped Silicon-Rich Oxide toroidal microcavities on chip

Abstract

The fabrication process of Ultrahigh-Q toroidal microcavities and integration of erbium-doped silicon-rich oxide thin film inside these structures are reported. Using micro-photoluminescence setup, we achieve selective detection of whispering gallery modes at room temperature. Quality factors as high as 3200 are measured, limited by the setup resolution.
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cea-01991966 , version 1 (24-01-2019)

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J. Jager, P. Noe, E. Picard, E. Delamadeleine, V. Calvo. Fabrication and characterization of Er-doped Silicon-Rich Oxide toroidal microcavities on chip. 2009 11th International Conference on Transparent Optical Networks (ICTON), Jun 2009, Ponta Delgada, Portugal. pp.1-3, ⟨10.1109/ICTON.2009.5185174⟩. ⟨cea-01991966⟩
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