Journal Articles
Applied Physics Letters
Year : 2006
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https://cea.hal.science/cea-01989853
Submitted on : Tuesday, January 22, 2019-3:51:16 PM
Last modification on : Monday, March 13, 2023-10:56:15 AM
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- HAL Id : cea-01989853 , version 1
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Romain Dujardin, V. Poydenot, T. Devillers, V. Favre-Nicolin, P. Gentile, et al.. Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations. Applied Physics Letters, 2006, 89 (15), pp.153129. ⟨cea-01989853⟩
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