Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles Journal of Applied Physics Year : 2002

Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

Abstract

The Ga surface coverage during the growth of GaN by plasma-assisted molecular-beam epitaxy (PAMBE) has been systematically studied by reflection high-energy electron diffraction as a function of the Ga flux and the substrate temperature. As a consequence, a diagram is depicted, which describes the Ga surface coverage during PAMBE as function of growth conditions. In particular, we show that a region exists in this diagram, in which the Ga surface coverage is independent of fluctuations in the Ga flux or the substrate temperature and which forms a “growth window” for GaN growth. The influence of the Ga surface coverage on the GaN surface morphology and the growth kinetics is discussed.
Fichier principal
Vignette du fichier
preprintGaN2001.pdf (985.34 Ko) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

cea-01989598 , version 1 (22-01-2019)

Identifiers

  • HAL Id : cea-01989598 , version 1

Cite

C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, et al.. Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN. Journal of Applied Physics, 2002, 91 (12), pp.9638. ⟨cea-01989598⟩
56 View
268 Download

Share

Gmail Facebook X LinkedIn More