This work presents the performance and transport characteristics of vertically stacked p-type MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. The conventional procedure to extract the effective oxide thickness (EOT) and Shift and Ratio Method (S&R) have been adapted and validated through tridimensional numerical simulations. Electrical characterization is performed for NWs with [110]-and [100]-oriented channels, as a function of both fin width (W$_{FIN}$) and channel length (L). Results show a good electrostatic control and reduced short channel effects (SCE) down to 15 nm gate length, for both orientations. Effective mobility is found around two times higher for [110]-in comparison to [100]-oriented NWs due to higher holes mobility contribution in (110) plan. Improvements obtained on I$_{ON}$/I$_{OFF}$ by reducing W$_{FIN}$ are mainly due to subthreshold slope decrease, once small and none mobility increase is obtained for [110]-and [100]-oriented NWs, respectively.