Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB - CEA - Commissariat à l’énergie atomique et aux énergies alternatives
Article Dans Une Revue Journal of Low Temperature Physics Année : 2008

Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB

Résumé

Various buffer layers have been investigated in order to improve the crystalline quality of NbN ultra-thin films. The structural properties, the thickness, the surface morphology of 5-10 nm NbN films have been studied by different techniques. Uncertainty on thickness measurements in this range and the relation between NbN film quality and gain bandwidth are discussed in the framework of their use in Hot Electron Bolometers (HEB).
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Dates et versions

cea-00372235 , version 1 (31-03-2009)

Identifiants

  • HAL Id : cea-00372235 , version 1

Citer

Bruno Guillet, Ö. Arthursson, Laurence Méchin, M.-N. Metzner, Marie-Pierre Chauvat, et al.. Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB. Journal of Low Temperature Physics, 2008, 151, pp.570-574. ⟨cea-00372235⟩
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