Large dispersive interaction between a CMOS double quantum dot and microwave photons
Résumé
We report fast charge-state readout of a double quantum dot in a CMOS split-gate silicon nanowire
transistor via the large dispersive interaction with microwave photons in a lumped-element resonator
formed by hybrid integration with a superconducting inductor. We achieve a coupling rate g$_0$/(2π ) =
204 ± 2 MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, α = 0.72,
and by inductively coupling to the resonator to increase its impedance, Zr = 560 $\Omega$. In the dispersive
regime, the large coupling strength at the double quantum-dot hybridization point produces a frequency
shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit
this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3
in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling
regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS
systems.
Domaines
Optique / photoniqueOrigine | Fichiers éditeurs autorisés sur une archive ouverte |
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