Article Dans Une Revue PRX Quantum Année : 2021

Large dispersive interaction between a CMOS double quantum dot and microwave photons

Jason W.A. Robinson

Résumé

We report fast charge-state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate g$_0$/(2π ) = 204 ± 2 MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, α = 0.72, and by inductively coupling to the resonator to increase its impedance, Zr = 560 $\Omega$. In the dispersive regime, the large coupling strength at the double quantum-dot hybridization point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems.
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hal-04918838 , version 1 (29-01-2025)

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David J Ibberson, Theodor Lundberg, James A Haigh, Louis Hutin, Benoit Bertrand, et al.. Large dispersive interaction between a CMOS double quantum dot and microwave photons. PRX Quantum, 2021, 2 (2), pp.020315. ⟨10.1103/prxquantum.2.020315⟩. ⟨hal-04918838⟩
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