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Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2014

Control of the ionization state of three single donor atoms in silicon

Abstract

By varying the front-gate and the substrate voltages in a short silicon-on-insulator trigate field-effect transistor, we control the ionization state of three arsenic donors. We obtain good quantitative agreement between three-dimensional electrostatic simulations and experiment for the control voltages at which the ionization takes place. It allows us to observe the three doubly occupied states As− at strong electric field in the presence of nearby source-drain electrodes.
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Dates and versions

hal-00981141 , version 1 (01-06-2022)

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B. Voisin, M. Cobian, X. Jehl, M. Vinet, Yann-Michel Niquet, et al.. Control of the ionization state of three single donor atoms in silicon. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89, pp.161404. ⟨10.1103/PhysRevB.89.161404⟩. ⟨hal-00981141⟩
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