Control of the ionization state of three single donor atoms in silicon
Résumé
By varying the front-gate and the substrate voltages in a short silicon-on-insulator trigate field-effect transistor, we control the ionization state of three arsenic donors. We obtain good quantitative agreement between three-dimensional electrostatic simulations and experiment for the control voltages at which the ionization takes place. It allows us to observe the three doubly occupied states As− at strong electric field in the presence of nearby source-drain electrodes.
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