Spin‐Orbit Readout Using Thin Films of Topological Insulator Sb 2 Te 3 Deposited by Industrial Magnetron Sputtering - Direction de la recherche technologique
Article Dans Une Revue Advanced Functional Materials Année : 2023

Spin‐Orbit Readout Using Thin Films of Topological Insulator Sb 2 Te 3 Deposited by Industrial Magnetron Sputtering

Nicolas Sebe
Paul Noël
Laurent Vila

Résumé

Driving a spin‐logic circuit requires the production of a large output signal by spin‐charge interconversion in spin‐orbit readout devices. This should be possible by using topological insulators, which are known for their high spin‐charge interconversion efficiency. However, high‐quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniques that are not compatible with conventional industrial deposition processes. The nanopatterning and electrical spin injection into these materials have also proven difficult due to their fragile structure and low spin conductance. The fabrication of a spin‐orbit readout device from the topological insulator Sb 2 Te 3 deposited by large‐scale industrial magnetron sputtering on SiO 2 is presented. Despite a modification of the Sb 2 Te 3 layer structural properties during the device nanofabrication, a sizeable output voltage is measured that can be unambiguously ascribed to a spin‐charge interconversion process. The results pave the way for the integration of layered van der Waals materials in spin‐logic devices.
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Dates et versions

hal-04701896 , version 1 (19-09-2024)

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Salvatore Teresi, Nicolas Sebe, Jessy Patterson, Théo Frottier, Aurélie Kandazoglou, et al.. Spin‐Orbit Readout Using Thin Films of Topological Insulator Sb 2 Te 3 Deposited by Industrial Magnetron Sputtering. Advanced Functional Materials, 2023, 33 (44), ⟨10.1002/adfm.202303878⟩. ⟨hal-04701896⟩
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