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In-depth Characterization of Resistive Memory-Based Ternary Content Addressable Memories2018 IEEE International Electron Devices Meeting (IEDM 2018), IEEE, Dec 2018, San Francisco, CA, United States. pp.20.3.1-20.3.4, ⟨10.1109/IEDM.2018.8614603⟩
Conference papers
hal-02939330v1
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Plasticity in memristive devices for spiking neural networksFrontiers in Neuroscience, 2015, 9, pp.51. ⟨10.3389/fnins.2015.00051⟩
Journal articles
cea-01846866v1
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