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Dissociation of GaN 2+ and AlN 2+ in APT: Analysis of experimental measurements
David Zanuttini
,
I. Blum
,
E. Di Russo
,
L. Rigutti
,
F. Vurpillot
,
et al.
Journal articles
hal-02061762v1
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Electronic structure and stability of the SiO 2+ dications produced in tomographic atom probe experiments
D. Zanuttini
,
I. Blum
,
L. Rigutti
,
F. Vurpillot
,
J. Douady
,
et al.
Journal articles
hal-02107463v1
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Integration of rare earth ions doped Si based down converter layers in an industrial Si solar cell
Julien Cardin
,
L. Dumont
,
Christophe Labbe
,
P.-M. Anglade
,
Cédric Frilay
,
et al.
E-MRS fall meeting 2019, Sep 2019, Varsovie, Poland
Conference poster
hal-02301126v1
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Dissociation of GaN$^{2+}$ and AlN$^{2+}$ in APT: Electronic structure and stability in strong DC field
D. Zanuttini
,
F. Vurpillot
,
J. Douady
,
E. Jacquet
,
P.-M. Anglade
,
et al.
Journal articles
hal-02061759v1
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Preconditioning of self-consistent-field cycles in density-functional theory: The extrapolar method
P.-M. Anglade
,
X. Gonze
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.045126
Journal articles
cea-00373310v1
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Rare earth doped silicon based frequency conversion layers for Si solar cell efficiency improvement
Lucile Dumont
,
Julien Cardin
,
Christophe Labbe
,
Cédric Frilay
,
P.-M. Anglade
,
et al.
Réunion plénière du GDR NACRE, Nov 2018, Nov 2018, Paris, France
Conference papers
hal-02402866v1
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