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authIdHal_s : eva-monroy

AlGaN Nanostructures for Electron Beam Pumped UV Emitters

Anjali Harikumar , Sergi Cuesta , Ioanna Dimkou , Quang Minh Thai , Fabrice Donatini , et al.
UKNC Winter Meeting, UK Nitrides Consortium, Jan 2021, Cambridge, United Kingdom
Conference papers hal-03995673v1

Quantum Transport in GaN/AlN Double-Barrier Heterostructure nanowires

Rudeesun Songmuang , G. Katsaros , Eva Monroy , P. Spathis , Catherine Bougerol , et al.
Nano Letters, 2010, 10 (9), pp.3545-3550. ⟨10.1021/nl1017578⟩
Journal articles hal-01003139v1

Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

F. B. Naranjo , P. K. Kandaswamy , S. Valdueza-Felip , V. Calvo , M. Gonzalez-Herraez , et al.
Applied Physics Letters, 2011, 98, pp.031902. ⟨10.1063/1.3535609⟩
Journal articles hal-00579968v1

Homogeneous linewidth of the intraband transition at 1.55µm in GaN/AlN quantum dots

Dac Trung Nguyen , Wolf Wuester , Philippe Roussignol , Christophe Voisin , Guillaume Cassabois , et al.
Applied Physics Letters, 2010, 97, pp.061903
Journal articles hal-00517734v1

PAMBE growth of (112¯ 2)-oriented GaN/AlN nanostructures on m-sapphire

L. Lahourcade , J. Renard , P. K. Kandaswamy , B. Gayral , Marie-Pierre Chauvat , et al.
Microelectronics Journal, 2009, 40, pp.325-327
Journal articles hal-00438093v1

Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

L. Monteagudo-Lerma , S. Valdueza-Felip , A. Núñez-Cascajero , A. Ruiz , M. Gonzalez-Herraez , et al.
Journal of Crystal Growth, 2016, 434, pp.13-18. ⟨10.1016/j.jcrysgro.2015.10.016⟩
Journal articles hal-02166018v1

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

Caroline B. Lim , Akhil Ajay , Jonas Lähnemann , Catherine Bougerol , Eva Monroy
Semiconductor Science and Technology, 2017, 32 (12), pp.125002. ⟨10.1088/1361-6641/aa919c⟩
Journal articles hal-01677499v1

Performance enhancement of an ultrafast all-fiber laser based on an InN saturable absorber using GRIN coupling

L. Monroy , M. Soriano-Amat , Ó. Esteban , Eva Monroy , M. González-Herráez , et al.
Optics Express, 2021, 29 (18), pp.29357-29365. ⟨10.1364/OE.430198⟩
Journal articles hal-03328305v1

Study of AlxGa1-xN/AlN quantum dots in the whole compositional range as potential sources of far UVC for disinfection

Anjali Harikumar , Fabrice Donatini , Edith Bellet-Amalric , C. Bougerol , Christophe Dujardin , et al.
Gallium Nitride Materials and Devices XVII, Jan 2022, San Francisco, United States. pp.42, ⟨10.1117/12.2607614⟩
Conference papers hal-03944503v1

Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

C. Himwas , R. Songmuan , L. S. Dang , J. Bleuse , L. Rapenne , et al.
Applied Physics Letters, 2013, 101, pp.241914
Journal articles hal-01021386v1

The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures

Ioanna Dimkou , Jonathan Houard , Névine Rochat , Pradip Dalapati , Enrico Di Russo , et al.
Microscopy and Microanalysis, 2023, ⟨10.1093/micmic/ozac051⟩
Journal articles hal-03938973v1

AlGaN/GaN HEMTS: material, processing, and characterization

F. Calle , T. Palacios , E. Monroy , J. Grajal , M. Verdu , et al.
Journal of Materials Science: Materials in Electronics, 2003, 14 (5/7), pp.271-277. ⟨10.1023/A:1023951323307⟩
Journal articles istex hal-02906523v1

Electrical and optical properties of heavily Ge-doped AlGaN

R Blasco , A. Ajay , E. Robin , Catherine Bougerol , K Lorentz , et al.
Journal of Physics D: Applied Physics, 2019, 52 (12), pp.125101. ⟨10.1088/1361-6463/aafec2⟩
Journal articles hal-02025948v1

Experimental and theoretical analysis of influence of barrier composition on optical properties of GaN/AlGaN multi-quantum wells: Temperature- and pressure-dependent photoluminescence studies

Kamil Koronski , Pawel Strak , Aleksandra Wierzbicka , Ewa Grzanka , Jolanta Borysiuk , et al.
Journal of Alloys and Compounds, 2018, 769, pp.1064-1071. ⟨10.1016/j.jallcom.2018.08.050⟩
Journal articles hal-02165992v1

Gallium kinetics on m -plane GaN

C. Lim , A. Ajay , E. Monroy
Applied Physics Letters, 2017, 111 (2), pp.022101. ⟨10.1063/1.4993570⟩
Journal articles hal-02166007v1

Hydrostatic pressure dependence of indirect and direct excitons in InGaN/GaN quantum wells

G. Staszczak , W. Trzeciakowski , Eva Monroy , A. Bercha , G. Muzioł , et al.
Physical Review B, 2020, 101 (8), pp.314-319. ⟨10.1103/PhysRevB.101.085306⟩
Journal articles hal-03116810v1
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Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature

Piotr Mensz , Ben Dror , Akhil Ajay , Catherine Bougerol , Eva Monroy , et al.
Journal of Applied Physics, 2019, 125 (17), pp.174505. ⟨10.1063/1.5079408⟩
Journal articles hal-02158322v1

GaN-based quantum cascade photodetector with 1.5 m peak detection wavelength

S. Sakr , Y. Kotsar , S. Haddadi , M. Tchernycheva , L. Vivien , et al.
Electronics Letters, 2010, 46 (25), pp.1685-1686. ⟨10.1049/el.2010.2181⟩
Journal articles hal-01067407v1

THz intersubband transitions in AlGaN/GaN multi‐quantum‐wells

Catherine Bougerol , Edith Bellet-Amalric , Eva Monroy , Mark Beeler
physica status solidi (a), 2014, 211 (4), pp.761. ⟨10.1002/pssa.201300431⟩
Journal articles istex hal-01006046v1

Experimental and theoretical analysis of transport properties of core–shell wire light emitting diodes probed by electron beam induced current microscopy

L. Redaelli , A. Mukhtarova , S. Valdueza-Felip , A. Ajay , C. Bougerol , et al.
Nanotechnology, 2014, 25 (25), pp.255201. ⟨10.1088/0957-4484/25/25/255201⟩
Journal articles hal-01986743v1
Image document

InGaN Quantum Dots Studied by Correlative Microscopy Techniques for Enhanced Light-Emitting Diodes

Ioanna Dimkou , Enrico Di Russo , Pradip Dalapati , Jonathan Houard , Nevine Rochat , et al.
ACS Applied Nano Materials, 2020, 3 (10), pp.10133-10143. ⟨10.1021/acsanm.0c02106⟩
Journal articles hal-02969122v1

Intersubband Optoelectronics Using III-Nitride Semiconductors

C B Lim , Akhil Ajay , Jonas Lähnemann , David A. Browne , Eva Monroy
Handbook of GaN Semiconductor Materials and Devices, 1, CRC Press, 2017, 978-1-4987-4713-4. ⟨10.1201/9781315152011⟩
Book sections hal-02506642v1

On intrinsic Stokes shift in wide GaN/AlGaN polar quantum wells

Michal Jarema , Marta Gladysiewicz , Ewelina Anna Zdanowicz , Edith Bellet-Amalric , Eva Monroy , et al.
Semiconductor Science and Technology, 2019, ⟨10.1088/1361-6641/ab20dd⟩
Journal articles hal-02158321v1

Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber

M. Jimenez-Rodriguez , L. Monteagudo-Lerma , E. Monroy , M. Gonzalez-Herraez , F. Naranjo
Optics Express, 2017, 25 (5), pp.5366. ⟨10.1364/OE.25.005366⟩
Journal articles hal-02163024v1
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Assessment of Active Dopants and p–n Junction Abruptness Using In Situ Biased 4D-STEM

Bruno César da Silva , Zahra Sadre Momtaz , Eva Monroy , Hanako Okuno , Jean-Luc Rouviere , et al.
Nano Letters, 2022, 22 (23), pp.9544-9550. ⟨10.1021/acs.nanolett.2c03684⟩
Journal articles hal-03881003v1

Surface or volume conduction in InN thin films?

Jean-Marc Routoure , Geeta Rani Mutta , D. Faye , Bruno Guillet , Laurence Méchin , et al.
INCF 2013 (20th International Conference on Noise and Fluctuations), Jun 2013, Montpellier, France
Conference papers hal-00979516v1

InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies

Anna Mukhtarova , Sirona Valdueza-Felip , Christophe Durand , Qing Pan , Louis Grenet , et al.
physica status solidi (c), 2013, 10 (3), pp.350 - 354. ⟨10.1002/pssc.201200682⟩
Journal articles istex hal-01875055v1

Design of polarization-insensitive superconducting single photon detectors with high-index dielectrics

L. Redaelli , V. Zwiller , E. Monroy , J. M. Gérard
Supercond.Sci.Technol., 2017, 30 (3), pp.035005. ⟨10.1088/1361-6668/30/3/035005⟩
Journal articles hal-01582679v1

Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets

Sergi Cuesta , Lou Denaix , Florian Castioni , Le Si Dang , Eva Monroy
Semiconductor Science and Technology, 2022, 37 (7), pp.075013. ⟨10.1088/1361-6641/ac7164⟩
Journal articles hal-03709532v1

Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering

Michael Sun , Rodrigo Blasco , Julian Nwodo , María de la Mata , Sergio Molina , et al.
Materials, 2022, 15 (20), pp.7373. ⟨10.3390/ma15207373⟩
Journal articles hal-03861343v1