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PAMBE growth of (112¯ 2)-oriented GaN/AlN nanostructures on m-sapphire

L. Lahourcade , J. Renard , P. K. Kandaswamy , B. Gayral , Marie-Pierre Chauvat , et al.
Microelectronics Journal, 2009, 40, pp.325-327
Journal articles hal-00438093v1

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

M. Shahmohammadi , W. Liu , G. Rossbach , L. Lahourcade , A. Dussaigne , et al.
Physical Review B, 2017, 95 (12), pp.125314. ⟨10.1103/PhysRevB.95.125314⟩
Journal articles hal-01677507v1

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

L. Lahourcade , P. K. Kandaswamy , J. Renard , Pierre Ruterana , H. Machhadani , et al.
Applied Physics Letters, 2008, 93, pp.111906
Journal articles cea-00373661v1

Molecular beam epitaxy of semipolar AlN(1122) and GaN(1122) on m-sapphire

Lise Lahourcade , Edith Bellet-Amalric , Eva Monroy , Marie-Pierre Chauvat , Pierre Ruterana
J Mater Sci: Mater Electron, 2008, 19, pp.805-809
Journal articles cea-00372923v1

Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties

L. Lahourcade , J. Renard , B. Gayral , E. Monroy , Marie-Pierre Chauvat , et al.
Journal of Applied Physics, 2008, 103, pp.093514
Journal articles cea-00372565v1