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High-Density 4T SRAM Bitcell in 14-nm 3-D CoolCube Technology Exploiting Assist TechniquesIEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2017, 25 (8), pp.2296-2306. ⟨10.1109/TVLSI.2017.2688862⟩
Journal articles
cea-02193602v1
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