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Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers

J. Biscarrat , R. Gwoziecki , Y. Baines , J. Buckley , C. Gillot , et al.
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2018, Chicago, United States. pp.200-203, ⟨10.1109/ISPSD.2018.8393637⟩
Conference papers cea-02187888v1

Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

R. Kom Kammeugne , C. Leroux , J. Cluzel , L. Vauche , C. Le Royer , et al.
IEEE Transactions on Electron Devices, In press, pp.1-5. ⟨10.1109/TED.2020.3015466⟩
Journal articles cea-02972351v1