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A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained SiP

J. M. Hartmann , M. Veillerot , B. Previtali
Semiconductor Science and Technology, 2017, 32 (10), pp.104003. ⟨10.1088/1361-6641/aa82d4⟩
Journal articles cea-02202443v1

Advances in top-down fabrication and processing of vertical SiGe nanowire arrays for future nanoelectronics applications

Jonas Müller , Aurélie Lecestre , Rémi Demoulin , Fuccio Cristiano , J. M. Hartmann , et al.
J2N 2022 - Journées Nationales Nanofils semiconducteurs, Sep 2022, Nice, France
Conference papers hal-03771519v1

Assessment of the growth/etch back technique for the production of Ge strain-relaxed buffers on Si

J. M. Hartmann , J. Aubin
Journal of Crystal Growth, 2018, 488, pp.43-50. ⟨10.1016/j.jcrysgro.2018.02.036⟩
Journal articles cea-02186240v1

Atmospheric Pressure Selective Epitaxial Growth of Heavily In Situ Phosphorous-Doped Si(C) Raised Sources and Drains

J. M. Hartmann , J. Aubin , S. Barraud , M. P. Samson
ECS Journal of Solid State Science and Technology, 2017, 6 (1), pp.P52-P57. ⟨10.1149/2.0211701jss⟩
Journal articles cea-02202448v1

Top-Down Fabrication of Vertical Nanostructured Channel Arrays on SiGe for Future Nanoelectronics Applications

Jonas Müller , Aurélie Lecestre , Rémi Demoulin , Fuccio Cristiano , J. M. Hartmann , et al.
MNE Eurosensors 2022, Sep 2022, Leuven, Belgium. 2022
Conference poster hal-03771503v1
Image document

Mid-infrared supercontinuum generation in a varying dispersion waveguide for multi-species gas spectroscopy

Alberto Della Torre , Remi Armand , Milan Sinobad , Kokou Firmin Fiaboe , Barry Luther-Davies , et al.
IEEE Journal of Selected Topics in Quantum Electronics, 2022, Nonlinear Integrated Photonics, 29, pp.5100509. ⟨10.1109/JSTQE.2022.3185169⟩
Journal articles hal-03998322v1