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Stacked Nanowires/Nanosheets GAA MOSFET From Technology to Design Enablement2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2017, Kamakura, Japan. ⟨10.23919/SISPAD.2017.8085250⟩
Conference papers
cea-01973405v1
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Hole weak anti-localization in a strained-Ge surface quantum wellApplied Physics Letters, 2017, 111 (6), pp.063102
Journal articles
hal-02054084v1
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Strain-Induced Spin-Resonance Shifts in Silicon DevicesPhysical Review Applied, 2018, 9, pp.044014. ⟨10.1103/PhysRevApplied.9.044014⟩
Journal articles
cea-01824000v1
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Afforestation in China cools local land surface temperatureProceedings of the National Academy of Sciences of the United States of America, 2014, 111 (8), pp.2915-2919. ⟨10.1073/pnas.1315126111⟩
Journal articles
hal-01074228v1
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Transport in TriGate nanowire FET: Cross-section effect at the nanometer scale2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2016, Burlingame, France. pp.1-2
Conference papers
hal-02143469v1
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Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic StrainPhysical Review Letters, 2018, 120, pp.167701. ⟨10.1103/PhysRevLett.120.167701⟩
Journal articles
hal-01871394v1
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An improved mobility model for FDSOI TriGate and other multi-gate Nanowire MOSFETs down to nanometer-scaled dimensions2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, France. pp.1-3
Conference papers
hal-02143370v1
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