Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers
J. Biscarrat
,
R. Gwoziecki
,
Y. Baines
,
J. Buckley
,
C. Gillot
,
et al.
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) , May 2018, Chicago, United States. pp.200-203,
⟨10.1109/ISPSD.2018.8393637⟩
Conference papers
cea-02187888v1
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From epitaxy to converters topologies what issues for 200 mm GaN/Si?
L. Di Cioccio
,
E. Morvan
,
M. Charles
,
P. Perichon
,
A. Torres
,
et al.
2015 IEEE International Electron Devices Meeting (IEDM) , Dec 2015, Washington, DC, United States. pp.16.5.1-16.5.4,
⟨10.1109/IEDM.2015.7409712⟩
Conference papers
cea-01839849v1
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High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors
M. Charles
,
Y. Baines
,
A. Bavard
,
R. Bouveyron
Journal articles
cea-02186138v1
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Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique
J. Lehmann
,
C. Leroux
,
G. Reimbold
,
M. Charles
,
A. Torres
,
et al.
2015 International Conference on Microelectronic Test Structures (ICMTS) , Mar 2015, Tempe, United States. pp.163-168,
⟨10.1109/ICMTS.2015.7106134⟩
Conference papers
hal-02009889v1
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