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authFullName_s : Y. Baines

Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers

J. Biscarrat , R. Gwoziecki , Y. Baines , J. Buckley , C. Gillot , et al.
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2018, Chicago, United States. pp.200-203, ⟨10.1109/ISPSD.2018.8393637⟩
Conference papers cea-02187888v1

From epitaxy to converters topologies what issues for 200 mm GaN/Si?

L. Di Cioccio , E. Morvan , M. Charles , P. Perichon , A. Torres , et al.
2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, DC, United States. pp.16.5.1-16.5.4, ⟨10.1109/IEDM.2015.7409712⟩
Conference papers cea-01839849v1

High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

M. Charles , Y. Baines , A. Bavard , R. Bouveyron
Journal of Crystal Growth, 2018, 483, pp.89-93. ⟨10.1016/j.jcrysgro.2017.11.004⟩
Journal articles cea-02186138v1

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

J. Lehmann , C. Leroux , G. Reimbold , M. Charles , A. Torres , et al.
2015 International Conference on Microelectronic Test Structures (ICMTS), Mar 2015, Tempe, United States. pp.163-168, ⟨10.1109/ICMTS.2015.7106134⟩
Conference papers hal-02009889v1