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Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layerJournal of Crystal Growth, 2019, 515, pp.48-52. ⟨10.1016/j.jcrysgro.2019.03.007⟩
Journal articles
cea-02186437v1
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InGaAs-OI Substrate Fabrication on a 300 mm WaferJournal of Low Power Electronics and Applications, 2016, 6 (4), pp.19
Journal articles
hal-01991855v1
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Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAMMaterials Science in Semiconductor Processing, 2017, 71, pp.433 - 440. ⟨10.1016/j.mssp.2017.08.033⟩
Journal articles
cea-01586412v1
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300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technologyJapanese Journal of Applied Physics, 2016, 55 (4S), pp.04EB10. ⟨10.7567/JJAP.55.04EB10⟩
Journal articles
hal-01991862v1
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