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Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challengesApplied Surface Science, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
Journal articles
hal-01947859v1
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Local lateral integration of 16-nm thick Ge nanowires on silicon on insulator substratesApplied Physics Letters, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Journal articles
cea-02185226v1
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