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In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268311⟩
Conference papers
hal-01791221v1
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Plasticity in memristive devices for spiking neural networksFrontiers in Neuroscience, 2015, 9, pp.51. ⟨10.3389/fnins.2015.00051⟩
Journal articles
cea-01846866v1
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