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Procédé d’élaboration de nanofils horizontaux sur un diélectrique
B. Salem
,
T. Baron
,
P. Gentile
,
P. Ferret
,
T. Ernst
France, N° de brevet: N° 07 08351. 2007
Patents
hal-01906181v1
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Procédé d'élaboration sur un matériau diélectrique de nanofils en matériaux semi-conducteur connectant deux électrodes.
B. Salem
,
T. Baron
,
P. Gentile
,
P. Ferret
,
T. Ernst
France, Patent n° : Patent PA2541FR/ FR 2 924 108/ WO2009098398. 2009
Patents
hal-00668079v1
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Catalyst Assisted Chemical Vapor Deposition of Silicon Nanowires and Nanotrees : morphology, kinetics, critical condition for growth, electrical properties
F. Dhalluin
,
M. den Hertog
,
I. Abed
,
B. Salem
,
J.R. Plaussu
,
et al.
MRS Fall Meeting, Nov 2007, boston, United States
Conference papers
hal-00396815v1
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Silicon nanowires grown in nanoporous alumina matrices on <100> oriented silicon substrates investigated by electron microscopy
T. David
,
D. Buttard
,
M. den Hertog
,
P. Gentile
,
T. Baron
,
et al.
Superlatice and Microstructures, 2008, pp.44 (4-5) October-November (2008) 354-361
Journal articles
hal-00394793v1
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Solid catalyzed PtSi growth of Si nanowires and electrical characterization
T. Baron
,
M. Gordon
,
F. Dhalluin
,
C. Ternon
,
P. Ferret
,
et al.
Applied Physics Letters, 2006, 89, pp.233111
Journal articles
hal-00290805v1
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The effects of HCl on silicon nanowire growth: surface chlorination and existence of a 'diffusion-limited minimum diameter
F. Oehler
,
P. Gentile
,
T. Baron
,
P. Ferret
Nanotechnology, 2009, pp.20 (47): Art. No. 475307 NOV 25 2009
Journal articles
hal-00455409v1
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Electron microscopy of gold catalyser silicon nanowires : defects in the wires and gold on the wires
M. den Hertog
,
J.L. Rouviere
,
F. Dhalluin
,
P. Gentile
,
P. Ferret
,
et al.
GDR Nanofils, 2007, ECULLY, France
Conference papers
hal-00396921v1
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Catalyst Assisted Silicon Nanowires Growth for Nanoelectronics
F. Dhalluin
,
P. Desre
,
T. Baron
,
P. Ferret
,
B. Salem
,
et al.
E-MRS, 2007, strasbourg, France
Conference papers
hal-00395914v1
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Growth and characterization of ZnO nanowires on p-type GaN
I.C. Robin
,
M. Lafossas
,
J. Garcia
,
M. Rosina
,
E. Latu-Romain
,
et al.
Journal articles
istex
hal-01875072v1
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The morphology of silicon nanowires grown in the presence of trimethylaluminium
F. Oehler
,
P. Gentile
,
T. Baron
,
M. den Hertog
,
J.L. Rouviere
,
et al.
Nanotechnology, 2009, pp.20 (24): Art. No. 245602 JUN 17 2009
Journal articles
hal-00455406v1
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Gold Catalyzed Growth of Silicon Nanowires by Chemical Vapor Deposition
F. Dhalluin
,
T. Baron
,
P. Ferret
,
P. Gentile
,
J.L. Rouviere
E-MRS Spring Meeting, 2006, nice, France
Conference papers
hal-00395858v1
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Small-diameter silicon nanowires growth by CVD Au catalyzed
P. Gentile
,
T. David
,
D. Buttard
,
M. den Hertog
,
J.L. Rouviere
,
et al.
E-MRS, 2007, strasbourg, France
Conference papers
hal-00395911v1
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Feasibility of Si Nanowire Integration: CVD Growth, Characterization and Comparison of Au vs PtSi Catalysts
T. Baron
,
M. Gordon
,
F. Dhalluin
,
M. den Hertog
,
P. Ferret
,
et al.
2006 MRS Fall Meeting, 2006, Boston, United States
Conference papers
hal-00390626v1
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Etude des propriétés nanomécaniques de nanofils Si par AFM
M. Gordon
,
T. Baron
,
F. Dhalluin
,
P. Gentile
,
P. Ferret
GDR Nanofils, 2006, Lille, France
Conference papers
hal-00396886v1
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Croissance catalytique de nanofils Si par VLS-CVD
F. Dhalluin
,
M. den Hertog
,
J.L. Rouviére
,
P. Gentile
,
P. Ferret
,
et al.
GDR Nanofils, 2006, Lille, France
Conference papers
hal-00396915v1
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Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition
O. Demichel
,
F. Oehler
,
V. Calvo
,
P. Noe
,
N. Pauc
,
et al.
Physica E: Low-dimensional Systems and Nanostructures, 2009, pp.41 (6): 963-965 MAY 8 2009
Journal articles
hal-00455408v1
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Growth and Characterization of Si and Ge Nanodots and Nanowires for Electronics and Photonics Applications
T. Baron
,
P. Ferret
,
P. Gentile
,
M. Gordon
ECS 207th Meeting, 2005, Quebec City, Canada
Conference papers
hal-00395841v1
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Self-connected horizontal silicon nanowire field effect transistor
B. Salem
,
F. Dhalluin
,
H. Abed
,
T. Baron
,
P. Gentile
,
et al.
Solid State Communications, 2009, pp.149, 799 (2009)
Journal articles
hal-00394801v1
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Investigation of electronic states of silicon nanowires grown by vapor-liquid-solid method
O. Demichel
,
P. Noe
,
P. Gentile
,
V. Calvo
,
T. Baron
,
et al.
E-MRS, 2007, strasbourg, France
Conference papers
hal-00395913v1
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VLS-CVD growth and electrical characterization of individual silicon nanowires
B. Salem
,
F. . Dhalluin
,
T. Baron
,
P. Gentile
,
N. Pauc
,
et al.
397 WE-Heraeus-Seminar, 2007, bonne, Germany
Conference papers
hal-00396819v1
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Controlled growth of Branched Silicon Nanowires using trimethylaluminium and silane as CVD gas precursors
F. Oehler
,
P. Gentile
,
T. Baron
,
B. Salem
,
M. den Hertog
,
et al.
MRS Boston (2008), 2008, BOSTON, United States
Conference papers
hal-00396837v1
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Influence of CVD growth mode on silicon nanowires : effects of reactive HCl, temperatureand SiH4 partial pressure
F. Oehler
,
P. Gentile
,
T. Baron
,
B. Salem
,
M. den Hertog
,
et al.
MRS Boston (2008), 2008, BOSTON, United States
Conference papers
hal-00396838v1
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Evidence for low density of nonradiative defects in ZnO nanowires grown by metal organic vapor-phase epitaxy
I.C. Robin
,
B. Gauron
,
P. Ferret
,
C. Tavares
,
G. Feuillet
,
et al.
Journal articles
hal-00263656v1
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Procédé de réalisation d'un dispositif microélectronique émetteur de lumière à nanofils semiconducteurs formés sur un substrat métallique
P. Gilet
,
T. Baron
,
P. Ferret
,
P. Gentile
,
A. Tchelnokov
France, N° de brevet: N° 06 52075. 2006
Patents
hal-01906137v1
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Study of Si Nanowires Growth by CVD-VLS and Physical Properties
T. Baron
,
F. Dhalluin
,
B. Salem
,
B. Salhi
,
H. Abed
,
et al.
216th ECS Meeting in Vienna, 2009, Vienne, Austria
Conference papers
hal-00461113v1
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Controlled growth of branched nanowires using trimethylaluminium and silane as CVD gas Precursors
F. Oehler
,
P. Gentile
,
T. Baron
,
M. den Hertog
,
P. Ferret
E-MRS 2008, 2008, BOSTON, United States
Conference papers
hal-00396834v1
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Structural investigation by GIXRD and GISAXS of silicon nanowires grown by VLS on <111> oriented silicon substrate
T. David
,
D. Buttard
,
T. Schull
,
F. Dhalluin
,
P. Gentil
,
et al.
E-MRS 2008, 2008, BOSTON, United States
Conference papers
hal-00396835v1
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A new architecture for self-organized silicon nanowire growth integrated on a (100) silicon substrate
D. Buttard
,
T. David
,
P. Gentile
,
M. den Hertog
,
T. Baron
,
et al.
physica status solidi (a), 2008, pp.Vol 205, Issue 7, July (2008) 1606-1614
Journal articles
hal-00394787v1
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Growth and physical properties of Si Nanowires
T. Baron
,
M. Gordon
,
F. Dhalluin
,
K. Aissou
,
P. Ferret
,
et al.
E-MRS Spring Meeting, 2006, nice, France
Conference papers
hal-00395854v1
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Silicon nanowires: Diameter dependence of growth rate and delay in growth
F. Dhalluin
,
T. Baron
,
P. Ferret
,
B. Salem
,
P. Gentile
,
et al.
Applied Physics Letters, 2010, pp.96 (13), art. no. 133109
Journal articles
hal-00623435v1
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