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authFullName_s : Maxime Garcia Barros

Understanding of a new approach for silicon nitride spacer etching using gaseous hydrofluoric acid after hydrogen ion implantation

Vincent Ah-Leung , Olivier Pollet , Nicolas Posseme , Maxime Garcia Barros , Névine Rochat , et al.
Journal of Vacuum Science & Technology A, 2017, 35 (2), pp.021408. ⟨10.1116/1.4977077⟩
Journal articles cea-02202455v1
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Développement et caractérisation de procédés de gravure des espaceurs Si3N4 et SiCO pour la technologie FDSOI 14nm.

Maxime Garcia Barros
Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes, 2018. Français. ⟨NNT : 2018GREAT028⟩
Theses tel-01881670v1
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Metalorganic chemical vapor phase epitaxy growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses

Eric Frayssinet , Luan Nguyen , Marie Lesecq , N. Defrance , Maxime Garcia Barros , et al.
physica status solidi (a), 2020, 217 (7), pp.1900760. ⟨10.1002/pssa.201900760⟩
Journal articles hal-02929058v1

MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses

Eric Frayssinet , Luan Nguyen , Marie Lesecq , N. Defrance , Maxime Garcia Barros , et al.
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France
Conference papers hal-04038786v1