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authFullName_s : M. C. Bernard
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Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories

M. Kazar Mendes , E. Martinez , J.M. Ablett , M. Veillerot , R. Gassilloud , et al.
Scientific Reports, 2018, 8 (1), pp.17919 (2018). ⟨10.1038/s41598-018-36131-7⟩
Journal articles hal-01973334v1

Impact of dielectrics thermodynamics properties on the diffusion of copper and oxygen in CuTe-based CBRAM devices.

A. Marty , R. Gassilloud , E. Martinez , Corentin Vallée , M. Veillerot , et al.
MRS, 2015, Boston, United States
Conference papers hal-01877926v1

Study of chemical elements diffusion before and after resistive switching in Ta2O5-based CBRAM.

A. Marty , R. Gassilloud , E. Martinez , Corentin Vallée , M. Veillerot , et al.
EMRS Spring, 2015., 2015, Lille, France
Conference papers hal-01877907v1
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Progress in the study and construction of the tesla test facility injector

R. Chehab , M. C. Bernard , J.C. Bourdon , T. Garvey , B. Jacquemard , et al.
16th IEEE Particle Accelerator Conference (PAC 95) and International Conference on High-energy Accelerators (IUPAP), May 1995, Dallas, United States. pp.998-1000, ⟨10.1109/PAC.1995.505108⟩
Conference papers in2p3-00022706v1

Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance

A. Verdy , G. Navarro , M. C. Bernard , S. Chevalliez , N. Castellani , et al.
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingame, United States. pp.6D.4-1-6D.4-6
Conference papers cea-02187673v1

Investigation of Ta2O5-Based Hybrid OXRAM-CBRAM Including a Ti Layer to Generate Oxygen Vacancies.

G. Piccolboni , A. El Kacimi , G. Molas , A. Marty , R. Gassilloud , et al.
EMRS, 2015, 2015, Lille, France
Conference papers hal-01877911v1

Atomistic mechanisms of copper filament formation and composition in $Al_{2}$$ O_{3}$ -based conductive bridge random access memory

C. Nail , P. Blaise , G. Molas , M. C. Bernard , A. Roule , et al.
Journal of Applied Physics, 2017, 122 (2), pp.024503. ⟨10.1063/1.4990979⟩
Journal articles hal-01959911v1

Oxygen scavenging in TiN/Ta2O5 stack by thin PVD-flashed Al layers for RRAM application.

A. Marty , R. Gassilloud , M. C. Bernard , E. Nolot , S. Favier , et al.
ECASIA, 2015, Granada, Spain
Conference papers hal-01877920v1

Statistical analysis of CBRAM endurance

D. Alfaro Robayo , C. Nail , G. Sassine , J. F Nodin , M. C. Bernard , et al.
2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2018, Hsinchu, Taiwan. pp.115-116, ⟨10.1109/VLSI-TSA.2018.8403856⟩
Conference papers hal-02050364v1