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authFullName_s : J. Widiez

Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

J.C. Piñero , J. de Vecchy , D. Fernández , G. Alba , J. Widiez , et al.
Applied Surface Science, 2020, 528, pp.146998. ⟨10.1016/j.apsusc.2020.146998⟩
Journal articles hal-04094901v1


Kevin Guilloy , Nicolas Pauc , Alban Gassenq , P. Gentile , Samuel Tardif , et al.
12th International Conference on Group IV Photonics, Aug 2015, Vancouver, Canada
Conference papers cea-01998277v1

Fabrication of 200 mm Germanium-On-Insulator (GeOI): A step toward a Germanium photonic platform

V. Reboud , J. Widiez , J. Hartmann , E. Gomez , A. Gassenq , et al.
2016 IEEE 13th International Conference on Group IV Photonics (GFP), Aug 2016, Shanghai, China. pp.140-142, ⟨10.1109/GROUP4.2016.7739074⟩
Conference papers hal-02016503v1

Nonlinear direct band gap and Raman shift strain dependence in germanium under high uniaxial stress

Kevin Guilloy , Alban Gassenq , Nicolas Pauc , Samuel Tardif , Francois Rieutord , et al.
E-MRS spring meeting, May 2016, lille, France
Conference papers cea-01994354v1

Experimental determination of the channel backscattering coefficient on 10-70 nm-metal-gate, Double-Gate transistors

Vincent Barral , T. Poiroux , M. Vinet , J. Widiez , B. Previtali , et al.
Solid-State Electronics, 2007, 51 (4), pp.537-542. ⟨10.1016/j.sse.2007.02.016⟩
Journal articles istex hal-01759440v1

Advanced Wafer Level Packaging Technology by Layer Transfer Engineering : Application to 3D Packaging for vertical power devices

Nicolas Clément, Jean-Paul Rouger , J. Widiez , L. Benaissa , B. Imbert , P. Gondcharton , et al.
From nano to macro power electronics and packaging international workshop, Oct 2014, Tours, France
Conference papers hal-01092423v1

Spin transport in p -type germanium

F Rortais , S. Oyarzún , F. Bottegoni , J Rojas-Sánchez , P Laczkowski , et al.
Journal of Physics: Condensed Matter, 2016, 28 (16), ⟨10.1088/0953-8984/28/16/165801⟩
Journal articles hal-01614027v1

Photocurrent spectroscopy and X-ray microdiffraction study of highly strained germanium nanostructures

K. Guilloy , N. Pauc , A. Gassenq , P. Gentile , S. Tardif , et al.
2015 IEEE 12th International Conference on Group IV Photonics (GFP), Aug 2015, Vancouver, Canada. pp.173-174, ⟨10.1109/Group4.2015.7305919⟩
Conference papers hal-02016595v1

Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers

V. Reboud , A. Gassenq , K. Guilloy , G. Osvaldo Dias , J. Escalante , et al.
SPIE OPTO, Feb 2016, San Francisco, United States. pp.97520F, ⟨10.1117/12.2212597⟩
Conference papers hal-02016583v1

Design rules to control the tensile strain in Ge μ-membranes fabricated from GeOI substrates for photonics applications

G. Dias , D. Rouchon , J. Widiez , J. Hartmann , D. Fowler , et al.
2015 IEEE 12th International Conference on Group IV Photonics (GFP), Aug 2015, Vancouver, Canada. pp.133-134, ⟨10.1109/Group4.2015.7305988⟩
Conference papers hal-02016616v1

Non-linear bandgap strain dependence in highly strained germanium using strain redistribution in 200 mm GeOI wafers for laser applications

A. Gassenq , K. Guilloy , S. Tardif , J. Escalante , Y. M. Niquet , et al.
2016 IEEE 13th International Conference on Group IV Photonics (GFP), Aug 2016, Shanghai, China. pp.104-105, ⟨10.1109/GROUP4.2016.7739054⟩
Conference papers hal-02016529v1
Image document

Non-local electrical spin injection and detection in germanium at room temperature

F. Rortais , C. Vergnaud , Alain Marty , L. Vila , J.-P. Attané , et al.
Applied Physics Letters, 2017, 111 (18), pp.182401. ⟨10.1063/1.5003244⟩
Journal articles hal-01663940v1

Germanium based photonic components toward a full silicon/germanium photonic platform

V. Reboud , A. Gassenq , J.M. Hartmann , J. Widiez , L. Virot , et al.
Progress in Crystal Growth and Characterization of Materials, 2017, 63 (2), pp.1-24. ⟨10.1016/j.pcrysgrow.2017.04.004⟩
Journal articles hal-02016016v1

Shaping circuit environment to face the thermal challenge Innovative technologies from low to high power electronics

P. Coudrain , P. Colonna , L.-M. Collin , R. Prieto , L.G. Frechette , et al.
2018 IEEE Symposium on VLSI Technology, Jun 2018, Honolulu, France. pp.15-16, ⟨10.1109/VLSIT.2018.8510677⟩
Conference papers hal-02073365v1

Puce électronique, composants électroniques et bras de commutation incorporant cette puce électronique

Yvan Avenas , Jean-Christophe Crébier , Kremena Vladimirova , J. Widiez , L. Clavelier
France, N° de brevet: 10/54315. 2010
Patents hal-00608598v1

Distributed Bragg reflectors integration in highly strained Ge micro-bridges on 200 mm GeOI substrates for laser applications

A. Gassenq , S. Tardif , K. Guilloy , N. Pauc , J. Escalante , et al.
2015 IEEE 12th International Conference on Group IV Photonics (GFP), Aug 2015, Vancouver, Canada. pp.51-52, ⟨10.1109/Group4.2015.7305999⟩
Conference papers hal-02016605v1

Investigation of lasing in highly strained germanium at the crossover to direct band gap

F. Armand Pilon , Y-M. Niquet , J. Chretien , N. Pauc , V. Reboud , et al.
Physical Review Research, 2022, 4 (3), pp.033050. ⟨10.1103/PhysRevResearch.4.033050⟩
Journal articles hal-04014816v1

High-quality and homogeneous 200-mm GeOI wafers processed for high strain induction in Ge

A. Gassenq , S. Tardif , K. Guilloy , N. Pauc , M. Bertrand , et al.
SILICON PHOTONICS XII, Jan 2017, SAN FRANCISCO, United States. ⟨10.1117/12.2251790⟩
Conference papers hal-01974439v1

Highly strained Ge micro-blocks bonded on Si platform for mid-infrared photonic applications

A. Gassenq , K. Guilloy , N. Pauc , D. Rouchon , J. Widiez , et al.
MRS Communications, 2017, 7 (03), pp.691-694. ⟨10.1557/mrc.2017.53⟩
Journal articles hal-02060132v1

Non-linear model of electronic band structure to highly tensile-strained Germanium

Jose Escalante , A. Gassenq , S. Tardif , K. Guiloy , N. Pauc , et al.
2015 IEEE 12th International Conference on Group IV Photonics (GFP), Aug 2015, Vancouver, Canada. pp.77-78, ⟨10.1109/Group4.2015.7305955⟩
Conference papers hal-02016620v1

(Invited) SOI-Type Bonded Structures for Advanced Technology Nodes

J. Widiez , J. Hartmann , F. Mazen , S. Sollier , C. Veytizou , et al.
ECS Transactions, 2014, 64 (5), pp.35-48. ⟨10.1149/06405.0035ecst⟩
Journal articles hal-01991972v1

Cavity mode analysis of highly strained direct bandgap germanium micro-bridge cavities

F. Armand-Pilon , T. Zabel , E. Marin , C. Bonzon , S. Tardif , et al.
2017 IEEE 14th International Conference on Group IV Photonics (GFP), Aug 2017, Berlin, Germany. pp.17-18, ⟨10.1109/GROUP4.2017.8082174⟩
Conference papers hal-02016455v1
Image document

First demondtration of heat dissipation improvement in CMOS technology using Silicon-On-Diamond (SOD) substrates

J.-P. Mazelier , J. Widiez , F. Andrieu , M. Lions , S. Saada , et al.
IEEE International SOI Conference, Oct 2009, Foster City, United States. ⟨10.1109/SOI.2009.5318735⟩
Conference papers hal-00604213v1

3DVLSI with CoolCube process: An alternative path to scaling

P. Batude , C. Fenouillet-Beranger , L. Pasini , V. Lu , F. Deprat , et al.
2015 IEEE Symposium on VLSI Technology, Jun 2015, Kyoto, Japan. pp.T48-T49, ⟨10.1109/VLSIT.2015.7223698⟩
Conference papers hal-02049760v1

Lasing in strained germanium microbridges

F. Armand Pilon , A. Lyasota , Y.-M. Niquet , V. Reboud , V. Calvo , et al.
Nature Communications, 2019, 10 (1), ⟨10.1038/s41467-019-10655-6⟩
Journal articles hal-02164026v1

Highly strained direct bandgap Germanium cavities for a monolithic laser on Si

T. Zabel , E. Marin , R. Geiger , C. Bozon , S. Tardif , et al.
2016 IEEE 13th International Conference on Group IV Photonics (GFP), Aug 2016, Shanghai, China. pp.40-41, ⟨10.1109/GROUP4.2016.7739082⟩
Conference papers hal-02016549v1
Image document

Electrical spin injection in silicon and the role of defects

F. Rortais , C. Vergnaud , C. Ducruet , C. Beigne , Alain Marty , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2016, 94 (17), pp.174426. ⟨10.1103/PhysRevB.94.174426⟩
Journal articles hal-01663960v1

Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ and biaxial (001) stress

A. Gassenq , S. Tardif , K. Guilloy , I. Duchemin , N. Pauc , et al.
Journal of Applied Physics, 2017, 121 (5), pp.055702. ⟨10.1063/1.4974202⟩
Journal articles hal-02060147v1