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Technical Design Report for the PANDA Endcap Disc DIRC
F. Davì
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W. Erni
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B. Krusche
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M. Steinacher
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N. Walford
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et al.
Journal articles
hal-03143726v1
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Impact of Si precursor mixing on the low temperature growth kinetics of Si and SiGe
J. Hartmann
Journal articles
cea-02185139v1
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The carbon budget of terrestrial ecosystems in East Asia over the last two decades
S. Piao
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A. Ito
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S. Li
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Y. Huang
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P. Ciais
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et al.
Journal articles
hal-02946537v1
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Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering
D. Jalabert
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D. Pelloux-Gervais
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A. Béché
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J. Hartmann
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P. Gergaud
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et al.
physica status solidi (a), 2012, 209 (2), pp.262-265
Journal articles
hal-01965024v1
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(Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities
L. Gaben
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S. Barraud
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M.-P. Samson
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M.-A. Jaud
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S. Martinie
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et al.
Journal articles
hal-02014062v1
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Impact of thickness on the structural properties of high tin content GeSn layers
J. Aubin
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J. Hartmann
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A. Gassenq
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L. Milord
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N. Pauc
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et al.
Journal articles
hal-02060108v1
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Atomic layer epitaxy of CdTe and MnTe
J. Hartmann
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G. Feuillet
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M. Charleux
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H. Mariette
Journal articles
hal-04142875v1
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Photocurrent spectroscopy and X-ray microdiffraction study of highly strained germanium nanostructures
K. Guilloy
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N. Pauc
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A. Gassenq
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P. Gentile
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S. Tardif
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et al.
Conference papers
hal-02016595v1
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Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers
V. Reboud
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A. Gassenq
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K. Guilloy
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G. Osvaldo Dias
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J. Escalante
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et al.
Conference papers
hal-02016583v1
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Design rules to control the tensile strain in Ge μ-membranes fabricated from GeOI substrates for photonics applications
G. Dias
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D. Rouchon
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J. Widiez
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J. Hartmann
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D. Fowler
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et al.
Conference papers
hal-02016616v1
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Non-linear bandgap strain dependence in highly strained germanium using strain redistribution in 200 mm GeOI wafers for laser applications
A. Gassenq
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K. Guilloy
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S. Tardif
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J. Escalante
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Y. M. Niquet
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et al.
Conference papers
hal-02016529v1
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Monolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers
H. Mehdi
,
M. Martin
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S. David
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J. Hartmann
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J. Moeyaert
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et al.
Journal articles
hal-03867652v1
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Study of Excited $\Xi$ Baryons with the PANDA Detector
G. Barucca
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F. Davi
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G. Lancioni
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P. Mengucci
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L. Montalto
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et al.
Journal articles
hal-03203663v1
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Abrupt shifts of the Sahara–Sahel boundary during Heinrich stadials
J. Collins
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A. Govin
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S. Mulitza
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D. Heslop
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M. Zabel
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et al.
Journal articles
hal-02180972v1
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Growth and structural properties of step-graded, high Sn content GeSn layers on Ge
J Aubin
,
J. Hartmann
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A. Gassenq
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J. Rouvière
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Eric Robin
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et al.
Semiconductor Science and Technology, 2017, 32 (9), pp.094006
Journal articles
hal-02045752v1
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Mid-infrared nonlinear optical response of Si-Ge waveguides with ultra-short optical pulses
Luca Carletti
,
Milan Sinobad
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P. Ma
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Y. Yu
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David Allioux
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et al.
Journal articles
hal-01489441v1
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Introducing photonic devices for 40Gbits/s wavelength division multiplexing transceivers on 300-mm SOI wafers using CMOS processes
C. Baudot
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J.M. Fedeli
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D. Marris-Morini
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Boris Caire-Remonnay
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L. Virot
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et al.
Integrated Optics: Devices, Materials, and Technologies, 2014, 8988, pp.89880O-1 - 89880O-16
Journal articles
hal-01490317v1
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Growth of CdTe/MnTe tilted and serpentine lattices on vicinal surfaces
J. Hartmann
,
M. Charleux
,
J. Rouvière
,
H. Mariette
Journal articles
hal-04142831v1
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PANDA Phase One
G. Barucca
,
F. Davì
,
G. Lancioni
,
P. Mengucci
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L. Montalto
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et al.
Journal articles
hal-03203644v1
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The design, construction, and commissioning of the KATRIN experiment
M. Aker
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K. Altenmüller
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J.F. Amsbaugh
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M. Arenz
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M. Babutzka
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et al.
Journal articles
hal-03178542v1
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Feasibility studies for the measurement of time-like proton electromagnetic form factors from $\bar{p}p \rightarrow \mu ^+\mu ^-$ at $\overline{\text {P}}\text {ANDA}$ at FAIR
G. Barucca
,
F. Davì
,
G. Lancioni
,
P. Mengucci
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L. Montalto
,
et al.
Journal articles
hal-02905936v1
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Precision resonance energy scans with the PANDA experiment at FAIR: Sensitivity study for width and line-shape measurements of the X(3872)
G. Barucca
,
F. Davì
,
G. Lancioni
,
P. Mengucci
,
L. Montalto
,
et al.
Journal articles
hal-01990311v1
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Suppression of Penning discharges between the KATRIN spectrometers
M. Aker
,
K. Altenmüller
,
A. Beglarian
,
J. Behrens
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A. Berlev
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et al.
Journal articles
hal-02403541v1
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High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration
J. Micout
,
V. Lapras
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P. Batude
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C. Fenouillet-Beranger
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J. Lacord
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et al.
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.32.2.1-32.2.4, ⟨10.1109/IEDM.2017.8268484⟩
Conference papers
hal-01959097v1
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Monolithically integrated InGaAs/AlGaAs multiple quantum well photodetectors on 300 mm Si wafers
H. Mehdi
,
M. Martin
,
C. Jany
,
L. Virot
,
J. Hartmann
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et al.
Journal articles
hal-03449032v1
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Assisted convective-capillary force assembly of gold colloids in a microfluidic cell: Plasmonic properties of deterministic nanostructures
T. Pinedo-Rivera
,
O. Lecarme
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J. Hartmann
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E. Rossitto
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K. Berton
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et al.
American Vacuum Society, 2008, pp.10.1116/1.3021396
Journal articles
hal-00385542v1
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Fabrication of 200 mm Germanium-On-Insulator (GeOI): A step toward a Germanium photonic platform
V. Reboud
,
J. Widiez
,
J. Hartmann
,
E. Gomez
,
A. Gassenq
,
et al.
Conference papers
hal-02016503v1
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Self-regulated growth of tilted superlattices by atomic layer epitaxy
J. Hartmann
,
M. Charleux
,
J. Cibert
,
H. Mariette
Journal articles
hal-04141505v1
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CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters
J. Hartmann
,
J. Cibert
,
F. Kany
,
H. Mariette
,
M. Charleux
,
et al.
Journal articles
hal-04142862v1
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First operation of the KATRIN experiment with tritium
Max Aker
,
K. Altenmüller
,
M. Arenz
,
W.-J. Baek
,
J. Barrett
,
et al.
Journal articles
hal-02327789v1
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