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authFullName_s : J. Buckley

ALD/PEALD CMOS Compatible Oxide for Resistive RAM

A. Salaün , V. Beugin , H. Grampeix , C. Licitra , N. Rochat , et al.
58th National Symposium AVS, Oct 2011, Nashville, United States
Conference papers hal-00650184v1

Comparative study of non-polar switching behaviors of NiO and HfO2-based oxide resistive-RAMs

V. Jousseaume , A. Fantini , J.F. Nodin , C. Guedj , A. Persico , et al.
Solid-State Electronics, 2011, 58, pp.62-67
Journal articles hal-00669415v1

Introducing the CTA concept

B.S. Acharya , M. Actis , T. Aghajani , G. Agnetta , J. Aguilar , et al.
Astroparticle Physics, 2013, 43, pp.3-18. ⟨10.1016/J.ASTROPARTPHYS.2013.01.007⟩
Journal articles in2p3-00813224v1

Back-end-of-line integration approaches for resistive memories

V. Jousseaume , J. Buckley , Y. Bernard , P. Gonon , Corentin Vallée , et al.
IITC 2009 – Hokkaido (Japon), 2009, hokaido, Japan
Conference papers hal-00461101v1

Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers

J. Biscarrat , R. Gwoziecki , Y. Baines , J. Buckley , C. Gillot , et al.
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2018, Chicago, United States. pp.200-203, ⟨10.1109/ISPSD.2018.8393637⟩
Conference papers cea-02187888v1

Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories

G. Molas , Marc Bocquet , J. Buckley , H. Grampeix , M. Gely , et al.
Solid-State Electronics, 2007, 51 (11-12), pp.1540 - 1546. ⟨10.1016/j.sse.2007.09.020⟩
Journal articles istex hal-01804685v1
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Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications

G. Molas , Marc Bocquet , J. Buckley , J. P Colonna , L. Masarotto , et al.
2007 IEEE International Electron Devices Meeting - IEDM '07, Dec 2007, Washington, France. pp.453-456, ⟨10.1109/IEDM.2007.4418971⟩
Conference papers hal-02072903v1

Science with the Cherenkov Telescope Array

B.S. Acharya , I. Agudo , Imen Al Samarai , R. Alfaro , J. Alfaro , et al.
Preprints, Working Papers, ... hal-01998995v1

Influence of process parameters and thermal treatment on the properties of high k oxides grown using atomic layer deposition for resistive RAM applications

A. Salaün , H. Grampeix , V. Beugin , C. Mannequin , P. Gonon , et al.
MAM 2012, Mar 2012, Grenoble, France
Conference papers hal-00669526v1

The impact of oxide properties on resistive RAM electrical characteristics

V. Jousseaume , C. Guedj , J.F. Nodin , A. Persico , H. Feldis , et al.
2010 MRS Spring Meeting, 2010, San Francisco (USA), United States
Conference papers hal-00625271v1
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Intrinsic fixed charge and trapping properties of HfAlO interpoly dielectric layers

Marc Bocquet , G. Molas , H. Grampeix , J. Buckley , F. Martin , et al.
International Conference on Memory Technology and Design (ICMTD), May 2007, Giens, France
Conference papers hal-01745578v1
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Impact of a HTO/Al$_2$O$_3$ bi-layer blocking oxide in nitride-trap non-volatile memories

Marc Bocquet , G. Molas , L. Perniola , X. Garros , J. Buckley , et al.
Solid-State Electronics, 2009, 53, pp.786 - 791. ⟨10.1016/j.sse.2009.03.018⟩
Journal articles hal-01737746v1

From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices IMW

J. Buckley , T. Pro , R. Barattin , A. Calborean , K. Huang , et al.
to be published (IEEE Conference Proceedings, 2009), May 2009, Monterey, CA, United States
Conference papers hal-00603820v1
Image document

Role of Ti and Pt electrodes on resistance switching variability of HfO$_2$-based Resistive Random Access Memory

T. Cabout , J. Buckley , C. Cagli , V. Jousseaume , J.-F. Nodin , et al.
EMRS 2012 symposium L: Novel functional materials and nanostructures for innovative non-volatile memory devices, May 2012, Strasbourg, France. pp.19 - 23, ⟨10.1016/j.tsf.2012.11.050⟩
Conference papers hal-01762335v1

Science with the Cherenkov Telescope Array

Imen Al Samarai , R. Alves Batista , U. Barres de Almeida , R. de Cássia dos Anjos , E. M. de Gouveia Dal Pino , et al.
The Astrophysical Journal Supplement, 2019, 240 (2), pp.32. ⟨10.1142/10986⟩
Journal articles hal-02365151v1