ALD/PEALD CMOS Compatible Oxide for Resistive RAM
A. Salaün
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V. Beugin
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H. Grampeix
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C. Licitra
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N. Rochat
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et al.
58th National Symposium AVS , Oct 2011, Nashville, United States
Conference papers
hal-00650184v1
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Comparative study of non-polar switching behaviors of NiO and HfO2-based oxide resistive-RAMs
V. Jousseaume
,
A. Fantini
,
J.F. Nodin
,
C. Guedj
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A. Persico
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et al.
Solid-State Electronics , 2011, 58, pp.62-67
Journal articles
hal-00669415v1
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Introducing the CTA concept
B.S. Acharya
,
M. Actis
,
T. Aghajani
,
G. Agnetta
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J. Aguilar
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et al.
Journal articles
in2p3-00813224v1
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Back-end-of-line integration approaches for resistive memories
V. Jousseaume
,
J. Buckley
,
Y. Bernard
,
P. Gonon
,
Corentin Vallée
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et al.
IITC 2009 – Hokkaido (Japon) , 2009, hokaido, Japan
Conference papers
hal-00461101v1
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Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers
J. Biscarrat
,
R. Gwoziecki
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Y. Baines
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J. Buckley
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C. Gillot
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et al.
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) , May 2018, Chicago, United States. pp.200-203,
⟨10.1109/ISPSD.2018.8393637⟩
Conference papers
cea-02187888v1
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Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories
G. Molas
,
Marc Bocquet
,
J. Buckley
,
H. Grampeix
,
M. Gely
,
et al.
Journal articles
istex
hal-01804685v1
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Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications
G. Molas
,
Marc Bocquet
,
J. Buckley
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J. P Colonna
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L. Masarotto
,
et al.
Conference papers
hal-02072903v1
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Science with the Cherenkov Telescope Array
B.S. Acharya
,
I. Agudo
,
Imen Al Samarai
,
R. Alfaro
,
J. Alfaro
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et al.
2019
Preprints, Working Papers, ...
hal-01998995v1
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Influence of process parameters and thermal treatment on the properties of high k oxides grown using atomic layer deposition for resistive RAM applications
A. Salaün
,
H. Grampeix
,
V. Beugin
,
C. Mannequin
,
P. Gonon
,
et al.
MAM 2012 , Mar 2012, Grenoble, France
Conference papers
hal-00669526v1
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The impact of oxide properties on resistive RAM electrical characteristics
V. Jousseaume
,
C. Guedj
,
J.F. Nodin
,
A. Persico
,
H. Feldis
,
et al.
2010 MRS Spring Meeting , 2010, San Francisco (USA), United States
Conference papers
hal-00625271v1
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Intrinsic fixed charge and trapping properties of HfAlO interpoly dielectric layers
Marc Bocquet
,
G. Molas
,
H. Grampeix
,
J. Buckley
,
F. Martin
,
et al.
International Conference on Memory Technology and Design (ICMTD) , May 2007, Giens, France
Conference papers
hal-01745578v1
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Impact of a HTO/Al$_2$O$_3$ bi-layer blocking oxide in nitride-trap non-volatile memories
Marc Bocquet
,
G. Molas
,
L. Perniola
,
X. Garros
,
J. Buckley
,
et al.
Journal articles
hal-01737746v1
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From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices IMW
J. Buckley
,
T. Pro
,
R. Barattin
,
A. Calborean
,
K. Huang
,
et al.
to be published (IEEE Conference Proceedings, 2009) , May 2009, Monterey, CA, United States
Conference papers
hal-00603820v1
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Role of Ti and Pt electrodes on resistance switching variability of HfO$_2$-based Resistive Random Access Memory
T. Cabout
,
J. Buckley
,
C. Cagli
,
V. Jousseaume
,
J.-F. Nodin
,
et al.
EMRS 2012 symposium L: Novel functional materials and nanostructures for innovative non-volatile memory devices , May 2012, Strasbourg, France. pp.19 - 23,
⟨10.1016/j.tsf.2012.11.050⟩
Conference papers
hal-01762335v1
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Science with the Cherenkov Telescope Array
Imen Al Samarai
,
R. Alves Batista
,
U. Barres de Almeida
,
R. de Cássia dos Anjos
,
E. M. de Gouveia Dal Pino
,
et al.
The Astrophysical Journal Supplement , 2019, 240 (2), pp.32.
⟨10.1142/10986⟩
Journal articles
hal-02365151v1
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